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首頁(yè) >MT5C6401>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
MT5C6401C-20LSLASHXT	文件：132.59 Kbytes Page：10 Pages	64K x 1 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? Speeds: 12, 15, 20, 25, 35, 45, 55, and 70 文件：132.59 Kbytes 頁(yè)數(shù)：10 Pages	AUSTIN	AUSTIN
MT5C6401C-25L/883C	文件：132.59 Kbytes Page：10 Pages	64K x 1 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? Speeds: 12, 15, 20, 25, 35, 45, 55, and 70 文件：132.59 Kbytes 頁(yè)數(shù)：10 Pages	AUSTIN	AUSTIN
MT5C6401C-25L/IT	文件：132.59 Kbytes Page：10 Pages	64K x 1 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? Speeds: 12, 15, 20, 25, 35, 45, 55, and 70 文件：132.59 Kbytes 頁(yè)數(shù)：10 Pages	AUSTIN	AUSTIN
MT5C6401C-25L/XT	文件：132.59 Kbytes Page：10 Pages	64K x 1 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? Speeds: 12, 15, 20, 25, 35, 45, 55, and 70 文件：132.59 Kbytes 頁(yè)數(shù)：10 Pages	AUSTIN	AUSTIN
MT5C6401C-25LSLASH883C	文件：132.59 Kbytes Page：10 Pages	64K x 1 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? Speeds: 12, 15, 20, 25, 35, 45, 55, and 70 文件：132.59 Kbytes 頁(yè)數(shù)：10 Pages	AUSTIN	AUSTIN
MT5C6401C-25LSLASHIT	文件：132.59 Kbytes Page：10 Pages	64K x 1 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? Speeds: 12, 15, 20, 25, 35, 45, 55, and 70 文件：132.59 Kbytes 頁(yè)數(shù)：10 Pages	AUSTIN	AUSTIN
MT5C6401C-25LSLASHXT	文件：132.59 Kbytes Page：10 Pages	64K x 1 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? Speeds: 12, 15, 20, 25, 35, 45, 55, and 70 文件：132.59 Kbytes 頁(yè)數(shù)：10 Pages	AUSTIN	AUSTIN
MT5C6401C-35L/883C	文件：132.59 Kbytes Page：10 Pages	64K x 1 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? Speeds: 12, 15, 20, 25, 35, 45, 55, and 70 文件：132.59 Kbytes 頁(yè)數(shù)：10 Pages	AUSTIN	AUSTIN
MT5C6401C-35L/IT	文件：132.59 Kbytes Page：10 Pages	64K x 1 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? Speeds: 12, 15, 20, 25, 35, 45, 55, and 70 文件：132.59 Kbytes 頁(yè)數(shù)：10 Pages	AUSTIN	AUSTIN
MT5C6401C-35L/XT	文件：132.59 Kbytes Page：10 Pages	64K x 1 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? Speeds: 12, 15, 20, 25, 35, 45, 55, and 70 文件：132.59 Kbytes 頁(yè)數(shù)：10 Pages	AUSTIN	AUSTIN

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詳細(xì)參數(shù)

型號(hào)：
MT5C6401
制造商：
MICRON
功能描述：
*

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	MT5C6401-35	Micron	24+	DIP-22	465		詢價(jià)
深圳市聯(lián)世界科技有限公司	MT5C6401-20	MCT	24+/25+		349	原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)	詢價(jià)
深圳市鵬和科技有限公司	MT5C6401-10	MT	24+	DIP28	5000	全現(xiàn)原裝公司現(xiàn)貨	詢價(jià)
深圳市佳鑫美電子科技有限公司	MT5C6401-15	MICRON	25+	DIP22	2568	原裝優(yōu)勢(shì)!絕對(duì)公司現(xiàn)貨	詢價(jià)
上海金慶電子技術(shù)有限公司	MT5C6401-15	MICRON	新		29	全新原裝貨期兩周	詢價(jià)
深圳市華來(lái)深電子有限公司	MT5C6401C-25/883C	MT	23+	CDIP22	8650	受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!	詢價(jià)
深圳市振宏微科技有限公司	MT5C6401DJ12TR	MICRON	23+	NA	2986	專做原裝正品,假一罰百!	詢價(jià)
深圳市達(dá)恩科技有限公司	MT5C6401EC-35	MOTO	24+	LCC	200	進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)	詢價(jià)
深圳市毅創(chuàng)弘電子科技有限公司	MT5C6401EC-35	MOTOROLA/摩托羅拉	24+	LCC	66800	原廠授權(quán)一級(jí)代理,專注汽車、醫(yī)療、工業(yè)、新能源！	詢價(jià)
深圳市河鋒鑫科技有限公司	MT5C6401EC-35	ASI	2021+		60000	原裝現(xiàn)貨，歡迎詢價(jià)	詢價(jià)

更多MT5C6401供應(yīng)商更新時(shí)間2026-1-19 10:01:00

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