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首頁 >MT5C1005>規(guī)格書列表

型號	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
MT5C1005C-55LSLASHIT	文件：182.14 Kbytes Page：13 Pages	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance, 文件：182.14 Kbytes 頁數(shù)：13 Pages	AUSTIN	AUSTIN
MT5C1005C-55LSLASHXT	文件：182.14 Kbytes Page：13 Pages	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance, 文件：182.14 Kbytes 頁數(shù)：13 Pages	AUSTIN	AUSTIN
MT5C1005C-70L/883C	文件：182.14 Kbytes Page：13 Pages	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance, 文件：182.14 Kbytes 頁數(shù)：13 Pages	AUSTIN	AUSTIN
MT5C1005C-70L/IT	文件：182.14 Kbytes Page：13 Pages	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance, 文件：182.14 Kbytes 頁數(shù)：13 Pages	AUSTIN	AUSTIN
MT5C1005C-70L/XT	文件：182.14 Kbytes Page：13 Pages	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance, 文件：182.14 Kbytes 頁數(shù)：13 Pages	AUSTIN	AUSTIN
MT5C1005C-70LSLASH883C	文件：182.14 Kbytes Page：13 Pages	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance, 文件：182.14 Kbytes 頁數(shù)：13 Pages	AUSTIN	AUSTIN
MT5C1005C-70LSLASHIT	文件：182.14 Kbytes Page：13 Pages	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance, 文件：182.14 Kbytes 頁數(shù)：13 Pages	AUSTIN	AUSTIN
MT5C1005C-70LSLASHXT	文件：182.14 Kbytes Page：13 Pages	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance, 文件：182.14 Kbytes 頁數(shù)：13 Pages	AUSTIN	AUSTIN
MT5C1005DCJ-20L/883C	文件：182.14 Kbytes Page：13 Pages	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance, 文件：182.14 Kbytes 頁數(shù)：13 Pages	AUSTIN	AUSTIN
MT5C1005DCJ-20L/IT	文件：182.14 Kbytes Page：13 Pages	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance, 文件：182.14 Kbytes 頁數(shù)：13 Pages	AUSTIN	AUSTIN

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詳細參數(shù)

型號：
MT5C1005
制造商：
AUSTIN
制造商全稱：
Austin Semiconductor
功能描述：
256K x 4 SRAM SRAM MEMORY ARRAY

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市卓越微芯電子有限公司	MT5C1005	MT	25+	DIP	4758	百分百原裝正品真實公司現(xiàn)貨庫存本公司只做原裝可	詢價
深圳市安富世紀電子有限公司	MT5C1005	MT	23+	DIP	4758	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳市創(chuàng)新跡電子有限公司	MT5C1005	MT	22+	DIP	20000	公司只做原裝品質保障	詢價
深圳市一線半導體有限公司	MT5C1005-20		24+	DIP28	1	自己現(xiàn)貨	詢價
深圳市聯(lián)世界科技有限公司	MT5C1005DJ-12	MCT	24+/25+		330	原裝正品現(xiàn)貨庫存價優(yōu)	詢價
深圳市達恩科技有限公司	MT5C1005C-25	ASI	24+	CDIP	300	進口原裝正品優(yōu)勢供應	詢價
深圳市毅創(chuàng)弘電子科技有限公司	MT5C1005C-25/883	ASI	24+	CDIP	66800	原廠授權一級代理,專注汽車、醫(yī)療、工業(yè)、新能源！	詢價
深圳市河鋒鑫科技有限公司	MT5C1005C-25	ASI	2021+		60000	原裝現(xiàn)貨，歡迎詢價	詢價
標準國際(香港)有限公司	MT5C1005DJ-35	MT	25+		8	公司優(yōu)勢庫存熱賣中!!	詢價
貿澤芯城（深圳）電子科技有限公司	MT5C1005DJ35	MICRON/美光	23+	SOJ	14930	原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種	詢價

更多MT5C1005供應商更新時間2026-1-20 10:49:00

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