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首頁(yè) >MT5C1005>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
MT5C1005C-25L/XT	文件：182.14 Kbytes Page：13 Pages	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance, 文件：182.14 Kbytes 頁(yè)數(shù)：13 Pages	AUSTIN	AUSTIN
MT5C1005C-25LSLASH883C	文件：182.14 Kbytes Page：13 Pages	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance, 文件：182.14 Kbytes 頁(yè)數(shù)：13 Pages	AUSTIN	AUSTIN
MT5C1005C-25LSLASHIT	文件：182.14 Kbytes Page：13 Pages	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance, 文件：182.14 Kbytes 頁(yè)數(shù)：13 Pages	AUSTIN	AUSTIN
MT5C1005C-25LSLASHXT	文件：182.14 Kbytes Page：13 Pages	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance, 文件：182.14 Kbytes 頁(yè)數(shù)：13 Pages	AUSTIN	AUSTIN
MT5C1005C-35L/883C	文件：182.14 Kbytes Page：13 Pages	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance, 文件：182.14 Kbytes 頁(yè)數(shù)：13 Pages	AUSTIN	AUSTIN
MT5C1005C-35L/IT	文件：182.14 Kbytes Page：13 Pages	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance, 文件：182.14 Kbytes 頁(yè)數(shù)：13 Pages	AUSTIN	AUSTIN
MT5C1005C-35L/XT	文件：182.14 Kbytes Page：13 Pages	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance, 文件：182.14 Kbytes 頁(yè)數(shù)：13 Pages	AUSTIN	AUSTIN
MT5C1005C-35LSLASH883C	文件：182.14 Kbytes Page：13 Pages	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance, 文件：182.14 Kbytes 頁(yè)數(shù)：13 Pages	AUSTIN	AUSTIN
MT5C1005C-35LSLASHIT	文件：182.14 Kbytes Page：13 Pages	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance, 文件：182.14 Kbytes 頁(yè)數(shù)：13 Pages	AUSTIN	AUSTIN
MT5C1005C-35LSLASHXT	文件：182.14 Kbytes Page：13 Pages	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 20, 25, 35, and 45 ? Battery Backup: 2V data retention ? Low power standby ? High-performance, 文件：182.14 Kbytes 頁(yè)數(shù)：13 Pages	AUSTIN	AUSTIN

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詳細(xì)參數(shù)

型號(hào)：
MT5C1005
制造商：
AUSTIN
制造商全稱：
Austin Semiconductor
功能描述：
256K x 4 SRAM SRAM MEMORY ARRAY

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市卓越微芯電子有限公司	MT5C1005	MT	25+	DIP	4758	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢價(jià)
深圳市安富世紀(jì)電子有限公司	MT5C1005	MT	23+	DIP	4758	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	MT5C1005	MT	22+	DIP	20000	公司只做原裝品質(zhì)保障	詢價(jià)
深圳市一線半導(dǎo)體有限公司	MT5C1005-20		24+	DIP28	1	自己現(xiàn)貨	詢價(jià)
深圳市聯(lián)世界科技有限公司	MT5C1005DJ-12	MCT	24+/25+		330	原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)	詢價(jià)
深圳市達(dá)恩科技有限公司	MT5C1005C-25	ASI	24+	CDIP	300	進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)	詢價(jià)
深圳市毅創(chuàng)弘電子科技有限公司	MT5C1005C-25/883	ASI	24+	CDIP	66800	原廠授權(quán)一級(jí)代理,專注汽車、醫(yī)療、工業(yè)、新能源！	詢價(jià)
深圳市河鋒鑫科技有限公司	MT5C1005C-25	ASI	2021+		60000	原裝現(xiàn)貨，歡迎詢價(jià)	詢價(jià)
標(biāo)準(zhǔn)國(guó)際(香港)有限公司	MT5C1005DJ-35	MT	25+		8	公司優(yōu)勢(shì)庫(kù)存熱賣中!!	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	MT5C1005DJ35	MICRON/美光	23+	SOJ	14930	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)

更多MT5C1005供應(yīng)商更新時(shí)間2026-1-19 13:57:00

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