| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MSN0260D | 20V(D-S) N-Channel Enhancement Mode Power MOS FET 文件：630.41 Kbytes 頁(yè)數(shù)：6 Pages | MORESEMI 摩矽半導(dǎo)體 | MORESEMI | |
MSN0260D | Low Voltage MOS FETs | MORESEMI 摩矽半導(dǎo)體 | MORESEMI | |
NCE N-Channel Enhancement Mode Power MOSFET 文件：363.55 Kbytes 頁(yè)數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
NCE N-Channel Enhancement Mode Power MOSFET 文件：362.22 Kbytes 頁(yè)數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0260T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =200V,ID =60A RDS(ON) 文件：318.37 Kbytes 頁(yè)數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER |
技術(shù)參數(shù)
- ID(A)：
60
- VDS(V)：
20
- VGS(V)：
±12
- Vt(V)：
0.8
- RDS(on) Max(Typ)( mΩ)_Vg=4.5V：
5.5
- RDS(on) Max(Typ)( mΩ)_Vg=2.5V：
8
- Package：
TO-252
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NK/南科功率 |
2025+ |
TO-252 |
986966 |
國(guó)產(chǎn) |
詢(xún)價(jià) | ||
MORESEMI |
2022+ |
SOP-8 |
40000 |
原廠代理 終端免費(fèi)提供樣品 |
詢(xún)價(jià) |
更多MSN0260D供應(yīng)商
更新時(shí)間2026-1-18 14:01:00
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