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          首頁(yè) >MSF6N60>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          MSF6N60

          N-Channel Enhancement Mode Power MOSFET

          文件:1.2097 Mbytes 頁(yè)數(shù):5 Pages

          BWTECH

          MTB6N60

          TMOS POWER FET 6.0 AMPERES 600 VOLTS

          TMOS E-FET? High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with

          文件:192.39 Kbytes 頁(yè)數(shù):10 Pages

          MOTOROLA

          摩托羅拉

          MTB6N60

          TMOS POWER FET 6.0 AMPERES 600 VOLTS

          TMOS E-FET? High Energy Power FET D2PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. De

          文件:160.56 Kbytes 頁(yè)數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          MTB6N60E

          TMOS POWER FET 6.0 AMPERES 600 VOLTS

          TMOS E-FET? High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with

          文件:192.39 Kbytes 頁(yè)數(shù):10 Pages

          MOTOROLA

          摩托羅拉

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          更多MSF6N60供應(yīng)商 更新時(shí)間2026-1-20 10:27:00
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