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          首頁(yè) >MSC8>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          MSC82302

          RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

          DESCRIPTION The MSC82302 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions. The MSC82302 was designed for Class C Amplifier/Oscillato

          文件:52.58 Kbytes 頁(yè)數(shù):4 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          MSC82304

          RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

          DESCRIPTION The MSC82304 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions. The MSC82304 was designed for Class C Amplifier/Oscillato

          文件:53.55 Kbytes 頁(yè)數(shù):4 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          MSC82306

          RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

          DESCRIPTION The MSC82306 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overaly die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions. The MSC82306 was designed for Class C Amplifier/Oscillato

          文件:54.54 Kbytes 頁(yè)數(shù):4 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          MSC82307

          RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

          DESCRIPTION The MSC82307 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions. The MSC82307 was designed for Class C amplifier/oscillato

          文件:51.44 Kbytes 頁(yè)數(shù):3 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          MSC83301

          絲?。?a target="_blank" title="Marking" href="/83301/marking.html">83301;Package:.2502LFL(S010);RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

          DESCRIPTION The MSC83301 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a refractory gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated condi

          文件:96.2 Kbytes 頁(yè)數(shù):5 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          MSC83303

          絲?。?a target="_blank" title="Marking" href="/83303/marking.html">83303;Package:.2502LFL(S010);RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

          DESCRIPTION The MSC83303 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated condi

          文件:93.34 Kbytes 頁(yè)數(shù):5 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          MSC83305

          RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

          DESCRIPTION The MSC83305 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an emitter site ballasted geometry with a refractory gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions.

          文件:123.05 Kbytes 頁(yè)數(shù):5 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          MSC85623

          NPN RF TRANSISTOR

          DESCRIPTION: The ASI MSC85623is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for RF Amplifier and Oscillator Applications up to 3.0 GHz.

          文件:20.51 Kbytes 頁(yè)數(shù):1 Pages

          ASI

          MSC8001

          HIGH POWER GaAs FET

          文件:18.45 Kbytes 頁(yè)數(shù):1 Pages

          ASI

          MSC8004

          HIGH POWER GaAs FET

          文件:18.25 Kbytes 頁(yè)數(shù):1 Pages

          ASI

          詳細(xì)參數(shù)

          • 型號(hào):

            MSC8

          • 制造商:

            ASI

          • 制造商全稱:

            ASI

          • 功能描述:

            NPN SILICON RF MICROWAVE TRANSISTOR

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          ASI
          23+
          TO-59
          8510
          原裝正品代理渠道價(jià)格優(yōu)勢(shì)
          詢價(jià)
          MOTOROLA
          22+
          BGA
          2000
          原裝正品現(xiàn)貨
          詢價(jià)
          MOTOROLA
          2410+
          BGA
          3266
          優(yōu)勢(shì)代理渠道 原裝現(xiàn)貨 可全系列訂貨
          詢價(jià)
          FREESCALE
          25+
          BGA
          1250
          大量現(xiàn)貨庫(kù)存,提供一站式服務(wù)!
          詢價(jià)
          MOTOROLA
          16+
          BGA
          2500
          進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
          詢價(jià)
          MOT
          24+
          BGA
          6980
          原裝現(xiàn)貨,可開13%稅票
          詢價(jià)
          FREESCAL
          23+
          BGAQFP
          8659
          原裝公司現(xiàn)貨!原裝正品價(jià)格優(yōu)勢(shì).
          詢價(jià)
          FREESCAL
          25+23+
          BGA
          19699
          絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
          詢價(jià)
          FREESCALE
          14+
          1218
          全新進(jìn)口原裝
          詢價(jià)
          FREESCA
          20+
          BGA
          19570
          原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
          詢價(jià)
          更多MSC8供應(yīng)商 更新時(shí)間2026-1-19 9:11:00
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