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          首頁 >MSC8>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MSC81005

          RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

          DESCRIPTION The MSC81005 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions.

          文件:99.79 Kbytes 頁數:5 Pages

          STMICROELECTRONICS

          意法半導體

          MSC81010

          RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

          DESCRIPTION The MSC81010 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding infinite load VSWR at any phase angle under rated conditions. The MS

          文件:101.18 Kbytes 頁數:5 Pages

          STMICROELECTRONICS

          意法半導體

          MSC81020

          RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

          DESCRIPTION The MSC81020 is a common base hermetically sealed silicon NPN microwave tranisitor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range. . EMI

          文件:89.65 Kbytes 頁數:5 Pages

          STMICROELECTRONICS

          意法半導體

          MSC81035M

          RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

          DESCRIPTION The MSC81035M is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. This device is a direct replacement for the MSC1035M. MSC81035M offers improved saturated ouput power and collector efficiency based on the test circuit described herein.

          文件:60.42 Kbytes 頁數:4 Pages

          STMICROELECTRONICS

          意法半導體

          MSC81035M

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI MSC81035M is a common base device, medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. FEATURES: ? Input matching ? Emitter site Ballasted. ? PG = 10 dB at 35 W/1150 MHz ? Omnigold? Metalization System

          文件:18.86 Kbytes 頁數:1 Pages

          ASI

          MSC81035MP

          RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

          DESCRIPTION The MSC81035MP is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. This device is a direct replacement for the MSC1035MP. MSC81035MP of fers improved saturated ouput power and collector efficiency based on the test circuit described he

          文件:57.47 Kbytes 頁數:4 Pages

          STMICROELECTRONICS

          意法半導體

          MSC81038

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI MSC81058 is Designed for General Purpose Class C Power Amplifier Applications up to 1.2 GHz. FEATURES: ? PG= 10 dB min. at 10 W/ 1.0 GHz ? Hermetic Microstrip Package ? Omnigold? Metalization System ? Emitter Ballasted

          文件:19.11 Kbytes 頁數:1 Pages

          ASI

          MSC81058

          RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

          DESCRIPTION The MSC81058 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding infinite load VSWR at any phase angle under rated conditions. The MS

          文件:101.98 Kbytes 頁數:5 Pages

          STMICROELECTRONICS

          意法半導體

          MSC81090

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI MSC81090 is Designed for General Purpose Class A Power Amplifier Applications from 0.4 - 1.2 GHz. FEATURES: ? PG = 10 dB min. at 2.0 W/ 1.0 GHz ? Hermetically sealed Package ? Omnigold? Metalization System ? Emitter Ballasted

          文件:116.75 Kbytes 頁數:1 Pages

          ASI

          MSC81111

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The MSC81111 is Designed for Class C Amplifier Applicatioons from 0.4 to 1.2 GHz, Supplied in Common Base Package.

          文件:17.4 Kbytes 頁數:1 Pages

          ASI

          詳細參數

          • 型號:

            MSC8

          • 制造商:

            ASI

          • 制造商全稱:

            ASI

          • 功能描述:

            NPN SILICON RF MICROWAVE TRANSISTOR

          供應商型號品牌批號封裝庫存備注價格
          ASI
          23+
          TO-59
          8510
          原裝正品代理渠道價格優(yōu)勢
          詢價
          MOTOROLA
          22+
          BGA
          2000
          原裝正品現(xiàn)貨
          詢價
          MOTOROLA
          2410+
          BGA
          3266
          優(yōu)勢代理渠道 原裝現(xiàn)貨 可全系列訂貨
          詢價
          FREESCALE
          25+
          BGA
          1250
          大量現(xiàn)貨庫存,提供一站式服務!
          詢價
          MOTOROLA
          16+
          BGA
          2500
          進口原裝現(xiàn)貨/價格優(yōu)勢!
          詢價
          MOT
          24+
          BGA
          6980
          原裝現(xiàn)貨,可開13%稅票
          詢價
          FREESCAL
          23+
          BGAQFP
          8659
          原裝公司現(xiàn)貨!原裝正品價格優(yōu)勢.
          詢價
          FREESCAL
          25+23+
          BGA
          19699
          絕對原裝正品全新進口深圳現(xiàn)貨
          詢價
          FREESCALE
          14+
          1218
          全新進口原裝
          詢價
          FREESCA
          20+
          BGA
          19570
          原裝優(yōu)勢主營型號-可開原型號增稅票
          詢價
          更多MSC8供應商 更新時間2026-1-18 16:01:00
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