RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：533.36 Kbytes 頁(yè)數(shù)：16 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistors

文件：536.35 Kbytes 頁(yè)數(shù)：16 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：488.85 Kbytes 頁(yè)數(shù)：12 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistors

文件：536.35 Kbytes 頁(yè)數(shù)：16 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistors

文件：536.35 Kbytes 頁(yè)數(shù)：16 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs

\nMRF9030LR1 Not Recommended for New Design. Possible Replacement Part: MWIC930NR1, MRFE6S9045NR1. \nTypical Two–Tone Performance at 945 MHz, 26 Volts\nOutput Power: 30 Watts PEP\n\tPower Gain: 19 dB\n\tEfficiency: 41.5%\n\tIMD: –32.5 dBc\n\nCapable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power\n\nIntegrated ESD Protection\n\nDesigned for Maximum Gain and Insertion Phase ;

恩XP

945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs

OverviewReplaced by MRF9030NR1(NBR1). There are no form, fit or function changes with this part replacement. The MRF9030MR1 and MRF9030MBR1 are designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make \n?Typical Performance at 945 MHz, 26 Volts\nOutput Power: 30 Watts PEP\n\tPower Gain: 20 dB\n\tEfficiency: 41% (Two Tones)\n\tIMD: –31 dBc\n\n?Integrated ESD Protection\n\n?Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power\n\n?Excellent Thermal Stability\n\n?Characterize;

恩XP

945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs

\nMRF9030NR1 Not Recommended for New Design. Possible Replacement Part: MWIC930NR1, MRFE6S9045NR1. \nTypical Performance at 945 MHz, 26 Volts\nOutput Power: 30 Watts PEP\n\tPower Gain: 20 dB\n\tEfficiency: 41% (Two Tones)\n\tIMD: –31 dBc\n\nCapable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power\n\nExcellent Thermal Stability\n\nCharacterized with Series Equivalent Large–Sig;

恩XP