RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line
 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them

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MOTOROLA

摩托羅拉

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF Sub- Micron MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-

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MOTOROLA

摩托羅拉

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF Sub- Micron MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-

文件：547.39 Kbytes 頁數(shù)：12 Pages

MOTOROLA

摩托羅拉

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF Sub- Micron MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-

文件：547.39 Kbytes 頁數(shù)：12 Pages

MOTOROLA

摩托羅拉

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF Sub- Micron MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-

文件：547.39 Kbytes 頁數(shù)：12 Pages

MOTOROLA

摩托羅拉

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common- source amplifier applic

文件：353.93 Kbytes 頁數(shù)：10 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier

文件：620.77 Kbytes 頁數(shù)：12 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier a

文件：295.86 Kbytes 頁數(shù)：12 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for

文件：452.04 Kbytes 頁數(shù)：12 Pages

MOTOROLA

摩托羅拉