RF Power Field Effect Transistor

文件：510.8 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：342.04 Kbytes 頁數(shù)：10 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistor

文件：332.8 Kbytes 頁數(shù)：12 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：342.04 Kbytes 頁數(shù)：10 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

960 MHz, 5.0 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

Overview \"MRF6522–5R1\" removed from active portfolio. Possible Replacement Part: \"MRF282ZR1\" or \"MRF9002R2\". Designed for Class A–AB common source, linear power amplifiers in the 960 MHz range. The MRF6522-5R1 has been specifically designed for use in Communications Network (GSM) base stations \n\n?Specified 26 Volts, 960 MHz, Class AB Characteristics\nOutput Power = 5.0 Watts CW\nPower Gain = 17 dB Min @ 960 MHz, 5.0 Watts CW\nEfficiency = 50% Min @ 960 MHz, 5.0 Watts CW\n?Excellent Thermal Stability\n?Characterized with Series Equivalent Large–Signal Impedance Parameters\n?S–Paramet;

恩XP

960 MHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

Overview \"MRF6522-060\" removed from active portfolio. Possible Replacement Part: \"MRF9060LR1\".The MRF6522-060 is designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz and specified for the GSM 925 – 960 MHz band. The high gain and broadband performance of the \n\n? Specified Performance @ 960 MHz, 28 Volts\nOutput Power — 60 Watts\n\tPower Gain — 12.5 dB (Min)\n\tEfficiency — 53% (Min)\n? 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR;

恩XP