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                >MRF652>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          MRF652
          RF POWER TRANSISTORS NPN SILICON
          
The RF Line
NPN SILICON RF POWER TRANSISTORS
Designedfor 12.5 Vdc UHFlarge–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz.

? Guaranteed 12.5 Volt, 512 MHz Characteristics
   Output Power = 5.0 Watts
   Minimum Gain = 10 dB
   Efficiency = 65 (
          文件：111.83 Kbytes 頁數(shù)：4 Pages
          MOTOROLA
          摩托羅拉
          

          MRF652
          NPN Silicon RF Power Transistors
          
NPN Silicon RF Power Transistors
          文件：81.42 Kbytes 頁數(shù)：1 Pages
          NJSEMINew Jersey Semi-Conductor Products, Inc.
          新澤西半導(dǎo)體新澤西半導(dǎo)體公司
          

          MRF652
          Trans GP BJT NPN 16V 2A 3-Pin NI-200Z
          NJS
          NJS
          

          MRF6522-70R3
          The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
          
RF Power Field Effect Transistor

N--Channel Enhancement--Mode Lateral MOSFET



Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large--signal, common source amplifier applications in 26 volt base station equipment.



? Speci
          文件：510.8 Kbytes 頁數(shù)：8 Pages
          FREESCALEFreescale Semiconductor, Inc
          飛思卡爾飛思卡爾半導(dǎo)體
          

          MRF652S
          NPN SILICON RF POWER TRANSISTOR
          
DESCRIPTION:
The ASI MRF652S is Designed for UHF large signal, amplifier Applications in FM equipment up to 512 MHz.
FEATURES:
? Common Emitter
? PG = 10 dB at 5.0 W/512 MHz
? Omnigold? Metalization System
          文件：17.08 Kbytes 頁數(shù)：1 Pages
          ASI
          

          MRF652S
          NPN Silicon RF Power Transistors
          
NPN Silicon RF Power Transistors
          文件：81.42 Kbytes 頁數(shù)：1 Pages
          NJSEMINew Jersey Semi-Conductor Products, Inc.
          新澤西半導(dǎo)體新澤西半導(dǎo)體公司
          

          MRF652S
          RF POWER TRANSISTORS NPN SILICON
          
The RF Line
NPN SILICON RF POWER TRANSISTORS
Designedfor 12.5 Vdc UHFlarge–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz.

? Guaranteed 12.5 Volt, 512 MHz Characteristics
   Output Power = 5.0 Watts
   Minimum Gain = 10 dB
   Efficiency = 65 (
          文件：111.83 Kbytes 頁數(shù)：4 Pages
          MOTOROLA
          摩托羅拉
          

          MRF6522-70
          RF Power Field Effect Transistor
          文件：510.8 Kbytes 頁數(shù)：8 Pages
          MOTOROLA
          摩托羅拉
          

          MRF6522-70
          RF Power Field Effect Transistor
          文件：332.8 Kbytes 頁數(shù)：12 Pages
          FREESCALEFreescale Semiconductor, Inc
          飛思卡爾飛思卡爾半導(dǎo)體
          

          MRF6522-70R3
          RF Power Field Effect Transistor
          文件：332.8 Kbytes 頁數(shù)：12 Pages
          FREESCALEFreescale Semiconductor, Inc
          飛思卡爾飛思卡爾半導(dǎo)體
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • Output Power：
            5W
          • Number of Elements per Chip：
            1
          • Minimum Operating Temperature：
            -65°C
          • Minimum DC Current Gain：
            10@200mA@5V
          • Maximum Transition Frequency：
            512MHz
          • Maximum Operating Temperature：
            200°C
          • Maximum Emitter Base Voltage：
            4V
          • Maximum DC Collector Current：
            2A
          • Maximum Collector Emitter Voltage：
            16V
          • Maximum Collector Base Voltage：
            36V
          • Material：
            Si
          • Configuration：
            Single Dual Emitter
          
            
          
        
          
            
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            更新時間2026-1-18 16:04:00
        
          
        
          
          
          
            
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