N-Channel Enhancement-Mode Lateral MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. ? Typical 2-Carrier N-CDMA Performance for VDD

文件：417.65 Kbytes 頁(yè)數(shù)：12 Pages

MOTOROLA

摩托羅拉

1990 MHz, 26 W AVG., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFET

Overview Replaced by MRF5S19130HSR3. \"H\" suffix indicates lower thermal resistance package. The MRF5S19130SR3 is designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. \n\n?Typical 2–Carrier N–CDMA Performance for VDD = 28 Volts,\nIDQ = 1200 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz,\nIS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)\n1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured\nover a 30 kHz Bandwidth at f1 –885 kHz and f2 +885 kHz. D;

恩XP

TO-270

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

上傳：深圳龐田科技有限公司

高頻管

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

上傳：深圳市翔睿騰科技有限公司

SMD

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

上傳：深圳市向鴻偉業(yè)電子有限公司