N-CHANNEL BROADBAND RF POWER FET

Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment. ? Guaranteed Performance at 512

文件：154.23 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

RF Power Field Effect Transistor

Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment. ? Guaranteed Performance at 512

文件：97.05 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

15 W, 512 MHz, 12.5 VOLTS N–CHANNEL BROADBAND RF POWER FET

Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment.? Guaranteed Performance at 512 MHz

恩XP

FET Transistor

NJS