RF POWER FIELD EFFECT TRANSISTOR

RF Power Field Effect Transistor The RF Sub–Micron MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cell

文件：582.43 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications

文件：365.97 Kbytes 頁數(shù)：12 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

RF POWER FIELD EFFECT TRANSISTOR

RF Power Field Effect Transistor The RF Sub–Micron MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cell

文件：582.43 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：385.77 Kbytes 頁數(shù)：12 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：385.77 Kbytes 頁數(shù)：12 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

1930-1990 MHz, 38 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET

Overview MRF5P20180HR6 removed from active portfolio. View replacement parts via Part Number Search. \n?Typical 2-Carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 1600 mA, Pout = 38 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.\nPower Gain: 14 dB\n\tDrain Efficiency: 26%\n\tIM3 @ 10 MHz Offset: –37.5 dBc in 3.84 MHz Channel Band;

恩XP

1990 MHz, 38 W AVG., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET

Overview Replaced by MRF5P20180HR6. \"H\" suffix indicates lower thermal resistance package. The MRF5P20180R6 is designed for W–CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/c \n\n?Typical 2–Carrier W–CDMA Performance for VDD = 28 Volts,\nIDQ = 2 x 800 mA, f1 = 1955 MHz, f2 = 1965 MHz, Channel Bandwidth = 3.84 MHz, \nAdjacent Channels Measured over 3.84 MHz BW @ f1 –5 MHz\nand f2 +5 MHz. Distortion Products Measured over a 3.84 MHz BW\n@ f1 –10 MHz and f2 +10 MHz, Each Ca;

恩XP