| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat 文件：387.73 Kbytes 頁數(shù)：12 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | FREESCALE | ||
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat 文件：387.73 Kbytes 頁數(shù)：12 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | FREESCALE | ||
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat 文件：387.73 Kbytes 頁數(shù)：12 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | FREESCALE | ||
RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radi 文件：562.19 Kbytes 頁數(shù)：12 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radi 文件：562.19 Kbytes 頁數(shù)：12 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radi 文件：562.19 Kbytes 頁數(shù)：12 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
RF Power Field Effect Transistors The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. ? Typical W–CDMA Performance for 214 文件：556.53 Kbytes 頁數(shù)：8 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. ? Typical W-CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW 文件：391.9 Kbytes 頁數(shù)：8 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | FREESCALE | ||
RF Power Field Effect Transistors The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. ? Typical W–CDMA Performance for 214 文件：556.53 Kbytes 頁數(shù)：8 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. ? Typical W-CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW 文件：391.9 Kbytes 頁數(shù)：8 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | FREESCALE |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
甚高頻 （VHF）_TR
- 封裝形式：
直插封裝
- 極限工作電壓：
36V
- 最大電流允許值：
0.4A
- 最大工作頻率：
220MHZ
- 引腳數(shù)：
3
- 可代換的型號：
BFR36,BLW11,3DA21A,
- 最大耗散功率：
1W
- 放大倍數(shù)：
- 圖片代號：
C-40
- vtest：
36
- htest：
220000000
- atest：
0.4
- wtest：
1
技術(shù)參數(shù)
- 線束品：
無
- PIN數(shù)：
13
- 插拔次數(shù)：
1000
- 開口方向：
筆直
- 適用電線外徑(Max.)：
7.0 ｍｍ
- (Max.)使用溫度范圍：
85 ℃
- (Min.)使用溫度范圍：
-25 ℃
- RoHS2：
匹配
- SVHC：
含有
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MICROCHIP |
12MODULE |
3200 |
原裝長期供貨! |
詢價(jià) | |||
FREESCALE |
05/06+ |
36 |
全新原裝100真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | |||
MOTO |
24+ |
SOP |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) | ||
TI |
25+ |
TSSOP30 |
30000 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
24+ |
400 |
本站現(xiàn)庫存 |
詢價(jià) | ||||
MicrochipTechnology |
24+ |
原廠原裝 |
6000 |
進(jìn)口原裝正品假一賠十,貨期7-10天 |
詢價(jià) | ||
MSC |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價(jià)優(yōu) |
詢價(jià) | ||
MOT |
23+ |
SOT-502A |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
MOT |
24+ |
原廠封裝 |
120 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
FREE/MOT |
24+ |
SMD |
5632 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存! |
詢價(jià) |
相關(guān)規(guī)格書
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- NE5532
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- SI7964DP
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- SI7941DP
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- SI7902EDN
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相關(guān)庫存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
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- NE5533
- SI7970DP
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- SI7913DN
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- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074
- TL074A
- TL074-EP
- TL074H
- SN65LVDT3486AD
- PS9307L2
- PS9332L
- PS9313L
- PS9307AL
- PS9351L2
- PS9331L
- PS9303L
