絲印：MRF；Package：DO-214AC；400W Transient Voltage Suppressor (TVS) protection device

Description and applications This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response time of clamping action is virtual

文件：489.87 Kbytes 頁數(shù)：6 Pages

MICROSEMI

美高森美

Fast Acting Radial Lead Micro Fuse Series

Fast Acting Radial Lead Micro Fuse Series

文件：102.1 Kbytes 頁數(shù)：2 Pages

BEL

Fast Acting Radial Lead Micro Fuse Series

Fast Acting Radial Lead Micro Fuse Series

文件：102.1 Kbytes 頁數(shù)：2 Pages

BEL

Fast Acting Radial Lead Micro Fuse Series

Fast Acting Radial Lead Micro Fuse Series

文件：102.1 Kbytes 頁數(shù)：2 Pages

BEL

Fast Acting Radial Lead Micro Fuse Series

Fast Acting Radial Lead Micro Fuse Series

文件：102.1 Kbytes 頁數(shù)：2 Pages

BEL

Fast Acting Radial Lead Micro Fuse Series

Fast Acting Radial Lead Micro Fuse Series

文件：102.1 Kbytes 頁數(shù)：2 Pages

BEL

Microwave Power Silicon Bipolar Transistor 5.0 W, 960-1215 MHz, 28V

Description and Applications Designed for CW and long-pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range with high overall duty cycles. Features ? Guaranteed performance @1.215GHz, 28Vdc ? Output power: 5.0W CW ? Minimum gain = 8.5dB,

文件：198.78 Kbytes 頁數(shù)：5 Pages

MA-COM

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Power Transistor . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. ? Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW

文件：100.17 Kbytes 頁數(shù)：4 Pages

MOTOROLA

摩托羅拉

The RF Line Microwave Power Transistor

. . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. ? Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW Minimum Gain = 8.5 dB, 10.3 dB (Typ) ? RF P

文件：160.25 Kbytes 頁數(shù)：4 Pages

MACOM

MICROWAVE POWER TRANSISTORS NPN SILICON

Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems. ? Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A Output Power = 0.2 Watt Minimum Gain = 10 dB ? 100 Tested for Load Mismatch at All Pha

文件：104.81 Kbytes 頁數(shù)：4 Pages

MACOM