Silicon Epitaxial Planar Switching Diode

Features -Small package -Low forward voltage -Fast reverse recovery time -Small total capacitance Applications -Ultra high speed switching application

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HUIXIN

慧芯電子

Small Signal Switching Diodes

Willas

威倫電子

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for use in High Gain, low noise general purpose amplifiers. Also excellent for high speed switching applications. Features ? Silicon NPN, high Frequency, To-72 packaged, Transistor ? High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz ? Low Noise Figure NF =

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MICROSEMI

美高森美

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for use in High Gain, low noise general purpose amplifiers. Also excellent for high speed switching applications. Features ? Silicon NPN, High Frequency Transistor ? High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz ? Low Noise Figure: NF = 2.5 dB (typ) @ f =

文件：90.31 Kbytes 頁數(shù)：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

JACK LEDs

Benefits ? Fewer LEDs Required ? Lowers Lighting System Cost Features ? High Flux Output ? Designed for High Current Operation ? Low Thermal Resistance ? Low Profile ? Reliable ? Packaged in Tubes for Use with Automatic Insertion Equipment Applications ? Automotive Exterior Lighting ?

文件：99.33 Kbytes 頁數(shù)：8 Pages

UOT

東貝光電