| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NPN Silicon Darlington Transistor FEATURES ? High DC Current Gain ? Electrically Similar to Popular TIP122 ? Built-in a Damper Diode at E-C We declare that the material of product compliance with RoHS requirements. 文件：427.28 Kbytes 頁數(shù)：2 Pages | FS | FS | ||
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Designed for General Purpose Amplifier and Low Speed Switching Applications 文件：408.73 Kbytes 頁數(shù)：5 Pages | CDIL | CDIL | ||
SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT Designed for general purpose amplifier and low speed switching applications. ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“–1” Suffix) ? Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) ? Sur 文件：284.04 Kbytes 頁數(shù)：8 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T 文件：91.56 Kbytes 頁數(shù)：8 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T 文件：91.56 Kbytes 頁數(shù)：8 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
Silicon NPN epitaxial planer Transistors Features ? High DC Current Gain ? Built-in a Damper Diode at E-C ? Halogen Free Available Upon Request By Adding Suffix -HF ? Moisture Sensitivity Level 1 ? Epoxy Meets UL 94 V-0 Flammability Rating ? Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Infor 文件：277.83 Kbytes 頁數(shù)：3 Pages | MCC | MCC | ||
Complementary Darlington Power Transistor 文件：87.53 Kbytes 頁數(shù)：7 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Low voltage power Darlington transistor 文件：232.98 Kbytes 頁數(shù)：9 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
NPN Silicon Darlington Transistor 文件：157.4 Kbytes 頁數(shù)：5 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
Complementary Darlington Power Transistor 文件：136.31 Kbytes 頁數(shù)：7 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Darl
- 性質(zhì)：
低頻或音頻放大 （LF）
- 封裝形式：
貼片封裝
- 極限工作電壓：
- 最大電流允許值：
8A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
- 最大耗散功率：
20W
- 放大倍數(shù)：
- 圖片代號：
G-127
- vtest：
0
- htest：
999900
- atest：
8
- wtest：
20
技術(shù)參數(shù)
- Pb-free：
Pb
- AEC Qualified：
A
- Halide free：
H
- PPAP Capablee：
P
- Status：
Active
- Polarity：
NPN
- IC Continuous (A)：
8
- V(BR)CEO Min (V)：
100
- VCE(sat) Max (V)：
2
- hFE Min (k)：
1
- hFE Max (k)：
12
- fT Min (MHz)：
4
- Package Type：
DPAK-3
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FSC |
19+ |
TO-252 |
58000 |
詢價 | |||
CJ/長電 |
26+ |
TO-252-2L |
76200 |
全新原裝現(xiàn)貨庫存,本公司承諾原裝正品假一賠百 |
詢價 | ||
CJ/長電 |
25+ |
TO-251-3L |
20300 |
CJ/長電原裝特價MJD122即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
CJ |
20+ |
TO-252 |
30000 |
全新原裝公司現(xiàn)貨
|
詢價 | ||
CJ(江蘇長電/長晶) |
2026+ |
TO-252-2(DPAK) |
10000 |
只做原裝,公司現(xiàn)貨,提供一站式BO |
詢價 | ||
CJ |
23+ |
TO252 |
52500 |
原廠原裝正品 |
詢價 | ||
CJ/長電 |
2021+ |
TO-252 |
9000 |
原裝現(xiàn)貨,隨時歡迎詢價 |
詢價 | ||
CJ/長晶 |
24+ |
TO-252 |
29785 |
只做全新原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
CJ |
2450+ |
TO252 |
9850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價 | ||
ON |
1215+ |
TO-252 |
150000 |
全新原裝,絕對正品,公司大量現(xiàn)貨供應(yīng). |
詢價 |
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