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          首頁 >MJD122>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MJD122

          Complementary Darlington Power Transistors

          Features ? D-PAK for Surface Mount Applications ? High DC Current Gain ? Built-in a Damper Diode at E-C ? Lead Formed for Surface Mount Applications ? Electrically Similar to Popular TIP122 ? Complement to MJD127

          文件:137.52 Kbytes 頁數(shù):8 Pages

          FAIRCHILD

          仙童半導體

          MJD122

          Complementary Darlington Power Transistors

          Features ? D-PAK for Surface Mount Applications ? High DC Current Gain ? Built-in a Damper Diode at E-C ? Lead Formed for Surface Mount Applications ? Electrically Similar to Popular TIP122 ? Complement to MJD127

          文件:284.04 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導體

          MJD122

          COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

          Designed for General Purpose Amplifier and Low Speed Switching Applications

          文件:408.73 Kbytes 頁數(shù):5 Pages

          CDIL

          MJD122

          Silicon NPN epitaxial planer Transistors

          Features ? High DC Current Gain ? Built-in a Damper Diode at E-C ? Halogen Free Available Upon Request By Adding Suffix -HF ? Moisture Sensitivity Level 1 ? Epoxy Meets UL 94 V-0 Flammability Rating ? Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Infor

          文件:277.83 Kbytes 頁數(shù):3 Pages

          MCC

          MJD122

          NPN PLASTIC ENCAPSULATE TRANSISTORS

          Features: * High DC current gain * Electrically similar to popular TIP122 * Built-in a damper diode at E-C

          文件:683.2 Kbytes 頁數(shù):4 Pages

          WEITRON

          MJD122

          TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR

          Description Designed for use in general purpose amplifier and low speed switching applications.

          文件:244.33 Kbytes 頁數(shù):1 Pages

          DCCOM

          道全

          MJD122

          isc Silicon NPN Darlington Power Transistor

          DESCRIPTION · Low Collector-Emitter saturation voltage · Lead formed for surface mount applications · High DC current gain · 100 avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for general purpose amplifier and lo

          文件:246.92 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          MJD122

          SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

          Designed for general purpose amplifier and low speed switching applications. ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“–1” Suffix) ? Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) ? Sur

          文件:284.04 Kbytes 頁數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          MJD122

          Silicon NPN Power Transistor

          DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

          文件:296.14 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          MJD122

          Silicon NPN Power Transistor

          DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

          文件:277.2 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          晶體管資料

          • 型號:

            MJD122

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Darl

          • 性質(zhì):

            低頻或音頻放大 (LF)

          • 封裝形式:

            貼片封裝

          • 極限工作電壓:

          • 最大電流允許值:

            8A

          • 最大工作頻率:

            <1MHZ或未知

          • 引腳數(shù):

            3

          • 可代換的型號:

          • 最大耗散功率:

            20W

          • 放大倍數(shù):

          • 圖片代號:

            G-127

          • vtest:

            0

          • htest:

            999900

          • atest:

            8

          • wtest:

            20

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • AEC Qualified:

            A

          • Halide free:

            H

          • PPAP Capablee:

            P

          • Status:

            Active

          • Polarity:

            NPN

          • IC Continuous (A):

            8

          • V(BR)CEO Min (V):

            100

          • VCE(sat) Max (V):

            2

          • hFE Min (k):

            1

          • hFE Max (k):

            12

          • fT Min (MHz):

            4

          • Package Type:

            DPAK-3

          供應(yīng)商型號品牌批號封裝庫存備注價格
          FSC
          19+
          TO-252
          58000
          詢價
          CJ/長電
          26+
          TO-252-2L
          76200
          全新原裝現(xiàn)貨庫存,本公司承諾原裝正品假一賠百
          詢價
          CJ/長電
          25+
          TO-251-3L
          20300
          CJ/長電原裝特價MJD122即刻詢購立享優(yōu)惠#長期有貨
          詢價
          CJ
          20+
          TO-252
          30000
          全新原裝公司現(xiàn)貨
          詢價
          CJ(江蘇長電/長晶)
          2026+
          TO-252-2(DPAK)
          10000
          只做原裝,公司現(xiàn)貨,提供一站式BO
          詢價
          CJ
          23+
          TO252
          52500
          原廠原裝正品
          詢價
          CJ/長電
          2021+
          TO-252
          9000
          原裝現(xiàn)貨,隨時歡迎詢價
          詢價
          CJ/長晶
          24+
          TO-252
          29785
          只做全新原裝進口現(xiàn)貨
          詢價
          CJ
          2450+
          TO252
          9850
          只做原裝正品現(xiàn)貨或訂貨假一賠十!
          詢價
          ON
          1215+
          TO-252
          150000
          全新原裝,絕對正品,公司大量現(xiàn)貨供應(yīng).
          詢價
          更多MJD122供應(yīng)商 更新時間2026-1-21 16:03:00
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