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    首頁
                >MJ2>規(guī)格書列表
                
    
            
    
                
    
                    
    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    MJ2500
    Silicon complementary trasistors power darlington
    
Power Transistors
TO-3 Case (Continued)
   
    文件：41.47 Kbytes 頁數(shù)：1 Pages
    CENTRAL
    

    MJ2500
    isc Silicon PNP Darlingtion Power Transistor
    
DESCRIPTION

·Built-in Base-Emitter Shunt Resistors

·High DC current gain

   hFE = 1000 (Min) @ IC = -5A

·Collector-Emitter Breakdown Voltage

   V(BR)CEO= -60V(Min)

·Complement to type MJ3000


APPLICATIONS

·Designed for use as output devices in complementary general purpose
    文件：74.85 Kbytes 頁數(shù)：2 Pages
    ISC
    無錫固電
    

    MJ2500
    Medium-Power Complementary Silicon Transistors
    
Medium-Power Complementary Silicon Transistors


. . . for use as output devices in complementary general purpose amplifier applications.


? High DC Current Gain — hpE = 4000 (Typ) @ IQ = 5.0 Adc

? Monolithic Construction with Built-in Base-Emitter Shunt Resistors


 
    文件：88.39 Kbytes 頁數(shù)：2 Pages
    NJSEMINew Jersey Semi-Conductor Products, Inc.
    新澤西半導體新澤西半導體公司
    

    MJ2500
    Silicon PNP Power Transistors
    
DESCRIPTION

·With TO-3 package

·DARLINGTON

·High DC current gain

·Complement to type MJ3000/3001


APPLICATIONS

·For use as output devices in complementary general purpose amplifier applications


 
    文件：118.39 Kbytes 頁數(shù)：3 Pages
    SAVANTIC
    

    MJ2501
    COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
    
DESCRIPTION
The MJ2501 is a Silicon Epitaxial-Base PNP power transistors in monolithic Darlington configuration, mounted in Jedec TO-3 meta case. It is intented for use in power linear and switching applications.
   
■ STMicroelectronics PREFERRED
    SALESTYPES
■ COMPLEMENTARY PNP - NPN DEVI
    文件：70.25 Kbytes 頁數(shù)：4 Pages
    STMICROELECTRONICS
    意法半導體
    

    MJ2501
    Silicon PNP Power Transistors
    
DESCRIPTION

·With TO-3 package

·DARLINGTON

·High DC current gain

·Complement to type MJ3000/3001


APPLICATIONS

·For use as output devices in complementary general purpose amplifier applications


 
    文件：118.39 Kbytes 頁數(shù)：3 Pages
    SAVANTIC
    

    MJ2501
    isc Silicon PNP Darlingtion Power Transistor
    
DESCRIPTION
? Built-in Base-Emitter Shunt Resistors
? High DC current gain
    hFE = 1000 (Min) @ IC = -5A
? Collector-Emitter Breakdown Voltage
    V(BR)CEO= -80V(Min)
? Complement to type MJ3001
   
APPLICATIONS
? Designed for use as output devices in complementary
    general purpose 
    文件：72.63 Kbytes 頁數(shù)：2 Pages
    ISC
    無錫固電
    

    MJ2501
    Medium-Power Complementary Silicon Transistors
    
Medium-Power Complementary Silicon Transistors


. . . for use as output devices in complementary general purpose amplifier applications.


? High DC Current Gain — hpE = 4000 (Typ) @ IQ = 5.0 Adc

? Monolithic Construction with Built-in Base-Emitter Shunt Resistors


 
    文件：88.39 Kbytes 頁數(shù)：2 Pages
    NJSEMINew Jersey Semi-Conductor Products, Inc.
    新澤西半導體新澤西半導體公司
    

    MJ2501
    10 Ampere Darlington Power Transistors Complementary Silicon
    
[multicomp]
Features:
? Medium-power complementary Silicon Transistors for use as output devices in
    complementary general purpose amplifier applications.
? High DC Current Gain
    hFE = 1000 (Typical) at IC = 5.0A.
? Monolithic construction with built Base-Emitter Shunt Resistors.
   
    文件：485.91 Kbytes 頁數(shù)：4 Pages
    ETCList of Unclassifed Manufacturers
    未分類制造商
    

    MJ2501
    Power Transistors
    
Power Transistors
TO-3 Case (Continued)
   
    文件：54.14 Kbytes 頁數(shù)：1 Pages
    CENTRAL
    

    
            
    
		
        
    
            
    
                
    晶體管資料
    
            
    
            
      
				
    • 型號：
      MJ2249

    • 別名：
      三極管、晶體管、晶體三極管
    • 生產(chǎn)廠家：
    • 制作材料：
      Si-NPN
    • 性質(zhì)：
      低頻或音頻放大 （LF）_開關管 （S）_功率放大 （L
    • 封裝形式：
      直插封裝
    • 極限工作電壓：
      60V
    • 最大電流允許值：
      2A
    • 最大工作頻率：
      <1MHZ或未知
    • 引腳數(shù)：
      2
    • 可代換的型號：
      BD177,BD235,BD439,2N3766,3DK105C,
    • 最大耗散功率：
      20W
    • 放大倍數(shù)：
    • 圖片代號：
      E-44
    • vtest：
      60
    • htest：
      999900
    • atest：
      2
    • wtest：
      20
    
            
    
        
    
		
        
    
            
    
                
    技術參數(shù)
    
            
    
            
      
            	
    • Lead/PadCount：
      2-pad ceramic leadless
    • CrystalCut：
      AT-cut 3rd Overtone
    • FrequencyRange：
      40 ~ 125 MHz
    • Description：
      MJ2 series Quartz Crystal Resonators
    • Pin(Pad)Pitch(mm)：
      3.5
    
            
    
        
    
            
    供應商型號品牌批號封裝庫存備注價格
    
                
    



    ST
    		

    13+
    		

    TO-3
    		

    6438
    		

    原裝分銷
    		
詢價
    

    



    PLESSEY
    		

    23+
    		

    DIP/28
    		

    7000
    		

    絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
    		
詢價
    

    



    東芝
    		

    		

    		

    100
    		

    原裝現(xiàn)貨,價格優(yōu)惠
    		
詢價
    

    



    ON
    		

    24+/25+
    		

    		

    56
    		

    原裝正品現(xiàn)貨庫存價優(yōu)
    		
詢價
    

    



    NS
    		

    24+
    		

    QFP
    		

    5632
    		

    公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
    		
詢價
    

    



    MJ
    		

    24+
    		

    QFP
    		

    1979
    		

    		
詢價
    

    



    GPS
    		

    23+
    		

    DIP14
    		

    5000
    		

    原裝正品,假一罰十
    		
詢價
    

    



    ONSEMICONDU
    		

    24+
    		

    原裝進口原廠原包接受訂貨
    		

    450
    		

    原裝現(xiàn)貨假一罰十
    		
詢價
    

    



    ST
    		

    25+
    		

    TO-3
    		

    600
    		

    百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
    		
詢價
    

    



    ST
    		

    25+
    		

    標準封裝
    		

    18000
    		

    原廠直接發(fā)貨進口原裝
    		
詢價
    

            
    
        
    
        
    更多MJ2供應商
            更新時間2026-1-22 9:01:00
        
    
        
    
          
    
            
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