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    首頁 >MJ2501>規(guī)格書列表

    型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

    MJ2501

    DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON

    Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. ? High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc ? Monolithic Construction with Built–in Base–Emitter Shunt Resistors

    文件:98.73 Kbytes 頁數(shù):4 Pages

    ONSEMI

    安森美半導(dǎo)體

    MJ2501

    Power Transistors

    Power Transistors TO-3 Case (Continued)

    文件:54.14 Kbytes 頁數(shù):1 Pages

    CENTRAL

    MJ2501

    Silicon complementary trasistors power darlington

    Power Transistors TO-3 Case (Continued)

    文件:41.47 Kbytes 頁數(shù):1 Pages

    CENTRAL

    MJ2501

    Darlington Transistor

    Features: ? Medium-power complementary Silicon Transistors for use as output devices in complementary general purpose amplifier applications ? High DC Current Gain hfe = 1,000 (Typical) at Ic = 5A ? Monolithic construction with built Base-Emitter Shunt Resistors Description Darlington Tran

    文件:326.24 Kbytes 頁數(shù):2 Pages

    MULTICOMP

    易絡(luò)盟

    MJ2501

    COMPLEMENTARY POWER DARLINGTONS

    COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ30

    文件:174.32 Kbytes 頁數(shù):3 Pages

    COMSET

    MJ2501

    10 Ampere Darlington Power Transistors Complementary Silicon

    [multicomp] Features: ? Medium-power complementary Silicon Transistors for use as output devices in complementary general purpose amplifier applications. ? High DC Current Gain hFE = 1000 (Typical) at IC = 5.0A. ? Monolithic construction with built Base-Emitter Shunt Resistors.

    文件:485.91 Kbytes 頁數(shù):4 Pages

    ETCList of Unclassifed Manufacturers

    未分類制造商

    MJ2501

    isc Silicon PNP Darlingtion Power Transistor

    DESCRIPTION ? Built-in Base-Emitter Shunt Resistors ? High DC current gain hFE = 1000 (Min) @ IC = -5A ? Collector-Emitter Breakdown Voltage V(BR)CEO= -80V(Min) ? Complement to type MJ3001 APPLICATIONS ? Designed for use as output devices in complementary general purpose

    文件:72.63 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    MJ2501

    Medium-Power Complementary Silicon Transistors

    Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. ? High DC Current Gain — hpE = 4000 (Typ) @ IQ = 5.0 Adc ? Monolithic Construction with Built-in Base-Emitter Shunt Resistors

    文件:88.39 Kbytes 頁數(shù):2 Pages

    NJSEMINew Jersey Semi-Conductor Products, Inc.

    新澤西半導(dǎo)體新澤西半導(dǎo)體公司

    MJ2501

    Silicon PNP Power Transistors

    DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ3000/3001 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications

    文件:118.39 Kbytes 頁數(shù):3 Pages

    SAVANTIC

    MJ2501

    COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

    DESCRIPTION The MJ2501 is a Silicon Epitaxial-Base PNP power transistors in monolithic Darlington configuration, mounted in Jedec TO-3 meta case. It is intented for use in power linear and switching applications. ■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVI

    文件:70.25 Kbytes 頁數(shù):4 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    晶體管資料

    • 型號(hào):

      MJ2501

    • 別名:

      三極管、晶體管、晶體三極管

    • 生產(chǎn)廠家:

    • 制作材料:

      Si-P+Darl+Di

    • 性質(zhì):

      低頻或音頻放大 (LF)_開關(guān)管 (S)_功率放大 (L

    • 封裝形式:

      直插封裝

    • 極限工作電壓:

      60V

    • 最大電流允許值:

      100A

    • 最大工作頻率:

      <1MHZ或未知

    • 引腳數(shù):

      2

    • 可代換的型號(hào):

      BDW84A..D,BCX64A...C,BDX66,MJ4030,2N6050,2N6051,2N6052,

    • 最大耗散功率:

      150W

    • 放大倍數(shù):

      β>1000

    • 圖片代號(hào):

      E-44

    • vtest:

      60

    • htest:

      999900

    • atest:

      100

    • wtest:

      150

    產(chǎn)品屬性

    • 產(chǎn)品編號(hào):

      MJ2501

    • 制造商:

      STMicroelectronics

    • 類別:

      分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個(gè)

    • 包裝:

      剪切帶(CT)帶盒(TB)

    • 晶體管類型:

      PNP - 達(dá)林頓

    • 不同?Ib、Ic 時(shí)?Vce 飽和壓降(最大值):

      4V @ 50mA,10A

    • 電流 - 集電極截止(最大值):

      1mA

    • 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)(最小值):

      1000 @ 5A,3V

    • 工作溫度:

      200°C(TJ)

    • 安裝類型:

      底座安裝

    • 封裝/外殼:

      TO-204AA,TO-3

    • 供應(yīng)商器件封裝:

      TO-3

    • 描述:

      TRANS PNP DARL 80V 10A TO3

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
    ON(安森美)
    24+
    標(biāo)準(zhǔn)封裝
    17048
    全新原裝正品/價(jià)格優(yōu)惠/質(zhì)量保障
    詢價(jià)
    24+
    1
    詢價(jià)
    MOT/ON
    24+
    TO-3
    2500
    原裝現(xiàn)貨假一罰十
    詢價(jià)
    MOT
    23+
    TO-3
    8560
    受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
    詢價(jià)
    MOT/ON
    專業(yè)鐵帽
    TO-3
    2500
    原裝鐵帽專營,代理渠道量大可訂貨
    詢價(jià)
    MOT/ON
    專業(yè)鐵帽
    TO-3
    67500
    鐵帽原裝主營-可開原型號(hào)增稅票
    詢價(jià)
    MOTOROLA/摩托羅拉
    25+
    TO-3
    30000
    原裝現(xiàn)貨,假一賠十.
    詢價(jià)
    22+
    NA
    3000
    加我QQ或微信咨詢更多詳細(xì)信息,
    詢價(jià)
    MOSPEC
    23+
    TO-3
    50000
    全新原裝正品現(xiàn)貨,支持訂貨
    詢價(jià)
    MOSPEC
    22+
    TO-3
    12245
    現(xiàn)貨,原廠原裝假一罰十!
    詢價(jià)
    更多MJ2501供應(yīng)商 更新時(shí)間2026-1-22 11:05:00

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