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    首頁
                >PBSS4350>規(guī)格書列表
                
    
            
    
                
    
                    
    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    PBSS4350
    50 V low VCEsat NPN transistor
    
DESCRIPTION
NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S.
FEATURES
? High power dissipation (830 mW)
? Ultra low collector-emitter saturation voltage
? 3 A continuous current
? High current switching
? Improved device reliability due to reduced heat generat
    文件：79 Kbytes 頁數(shù)：8 Pages
    PHI
    PHI
    PHI
    

    PBSS4350
    NPN transistor
    
DESCRIPTION

NPN low VCEsattransistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D.


FEATURES

? Low collector-emitter saturation voltage

? High current capability

? Improved device reliability due to reduced heat generation

? Replacement for SOT89/SOT223 standar
    文件：70.54 Kbytes 頁數(shù)：8 Pages
    PHI
    PHI
    PHI
    

    PBSS4350
    50 V low VCEsat NPN transistor
    DESCRIPTION\nNPN low VCEsattransistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D.FEATURES\n? Low collector-emitter saturation voltage\n? High current capability\n? Improved device reliability due to reduced heat generation\n? Replacement for SOT89/SOT223 standard packaged transis  ? Low collector-emitter saturation voltage\n? High current capability\n? Improved device reliability due to reduced heat generation\n? Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance.;
    恩XP
    恩XP
    

    PBSS4350D
    NPN transistor
    
DESCRIPTION

NPN low VCEsattransistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D.


FEATURES

? Low collector-emitter saturation voltage

? High current capability

? Improved device reliability due to reduced heat generation

? Replacement for SOT89/SOT223 standar
    文件：70.54 Kbytes 頁數(shù)：8 Pages
    PHI
    PHI
    PHI
    

    PBSS4350D
    50 V low VCEsat NPN transistor
    
DESCRIPTION
NPN low VCEsat transistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D.
FEATURES
? Low collector-emitter saturation voltage
? High current capability
? Improved device reliability due to reduced heat
   generation
? Replacement for SOT89/SOT223 standard package
    文件：316.41 Kbytes 頁數(shù)：9 Pages
    恩XP
    恩XP
    

    PBSS4350D
    絲?。?a target="_blank" title="Marking" href="/43/marking.html">43；Package：SOT457；50 V low VCEsat NPN transistor
    
FEATURES
?Low collector-emitter saturation voltage
?High current capability
?Improved device reliability due to reduced heat generation
?Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance.

APPLICATIONS
?Supply line switching circuits
?Battery management
    文件：503.85 Kbytes 頁數(shù)：10 Pages
    NEXPERIA
    安世
    

    PBSS4350PAS
    絲?。?a target="_blank" title="Marking" href="/g6/marking.html">G6；Package：SOT1061D；50 V, 3 A NPN low VCEsat transistor
    
1. General description
NPN low VCEsat DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic
package.
PNP complement: PBSS5350PAS

2. Features and benefits
? DFN2020D-3 (SOT1061D) package
? Low collector-emitter saturation voltage VCEsat
? High collector current capabili
    文件：284.51 Kbytes 頁數(shù)：13 Pages
    NEXPERIA
    安世
    

    PBSS4350PAS-Q
    絲?。?a target="_blank" title="Marking" href="/g6/marking.html">G6；Package：SOT1061D；50 V, 3 A NPN low VCEsat transistor
    
1. General description
NPN low VCEsat DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic
package.
PNP complement: PBSS5350PAS-Q

2. Features and benefits
? DFN2020D-3 (SOT1061D) package
? Low collector-emitter saturation voltage VCEsat
? High collector current capabi
    文件：285.73 Kbytes 頁數(shù)：13 Pages
    NEXPERIA
    安世
    

    PBSS4350S
    50 V low VCEsat NPN transistor
    
DESCRIPTION
NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S.
FEATURES
? High power dissipation (830 mW)
? Ultra low collector-emitter saturation voltage
? 3 A continuous current
? High current switching
? Improved device reliability due to reduced heat generat
    文件：79 Kbytes 頁數(shù)：8 Pages
    PHI
    PHI
    PHI
    

    PBSS4350SPN
    50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor
    
Features
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
    文件：696.38 Kbytes 頁數(shù)：14 Pages
    NEXPERIA
    安世
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • Package name：
      TSOP6
    • Size (mm)：
      2.9 x 1.5 x 1
    • Polarity：
      NPN
    • Ptot (mW)：
      600
    • VCEO [max] (V)：
      50
    • IC [max] (mA)：
      3000
    • hFE [min]：
      200
    • Tj [max] (°C)：
      150
    • fT [min] (MHz)：
      100
    • Automotive qualified：
      Y
    
            
    
        
    
            
    供應(yīng)商型號品牌批號封裝庫存備注價格
    
                
    



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    更多PBSS4350供應(yīng)商
            更新時間2026-1-22 11:04:00
        
    
        
    
          
    
            
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