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首頁 >PBSS4350>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
PBSS4350SPN	文件：100.84 Kbytes Page：14 Pages	50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor General description PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High collector current gain 文件：100.84 Kbytes 頁數(shù)：14 Pages	恩XP	恩XP
PBSS4350SPN	文件：730.36 Kbytes Page：19 Pages	絲?。?a target="_blank" title="Marking" href="/4350spn/marking.html">4350SPN；Package：SO8；50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 文件：730.36 Kbytes 頁數(shù)：19 Pages	NEXPERIA 安世	NEXPERIA
PBSS4350SS	文件：730.36 Kbytes Page：19 Pages	50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 文件：730.36 Kbytes 頁數(shù)：19 Pages	NEXPERIA 安世	NEXPERIA
PBSS4350SS	文件：696.38 Kbytes Page：14 Pages	絲印：4350SS；Package：SO8；50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 文件：696.38 Kbytes 頁數(shù)：14 Pages	NEXPERIA 安世	NEXPERIA
PBSS4350SS	文件：100.84 Kbytes Page：14 Pages	50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor General description PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High collector current gain 文件：100.84 Kbytes 頁數(shù)：14 Pages	恩XP	恩XP
PBSS4350SS.115	文件：107.36 Kbytes Page：14 Pages	NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. General description PNP/PNP double low VCEsatBreakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High collector current gain ( 文件：107.36 Kbytes 頁數(shù)：14 Pages	恩XP	恩XP
PBSS4350T	文件：950.45 Kbytes Page：6 Pages	Silicon NPN transistor in a SOT-23 Plastic Package Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits. 文件：950.45 Kbytes 頁數(shù)：6 Pages	FOSHAN 藍(lán)箭電子	FOSHAN
PBSS4350T	文件：368.74 Kbytes Page：10 Pages	50 V; 3 A NPN low VCEsat (BISS) transistor DESCRIPTION NPN low VCEsattransistor in a SOT23 plastic package. PNP complement: PBSS5350T. FEATURES ? Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat ? High collector current capability ? High collector current gain ? Improved efficiency due to reduced heat gene 文件：368.74 Kbytes 頁數(shù)：10 Pages	恩XP	恩XP
PBSS4350T	文件：1.30095 Mbytes Page：13 Pages	絲?。?a target="_blank" title="Marking" href="/zc/marking.html">ZC；Package：SOT23；50 V; 3 A NPN low VCEsat transistor 1. General description NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350T 2. Features and benefits ? Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat ? High collector current capability 文件：1.30095 Mbytes 頁數(shù)：13 Pages	NEXPERIA 安世	NEXPERIA
PBSS4350T	文件：84.47 Kbytes Page：10 Pages	50 V; 3 A NPN low VCEsat (BISS) transistor DESCRIPTION NPN low VCEsattransistor in a SOT23 plastic package. PNP complement: PBSS5350T. FEATURES ? Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat ? High collector current capability ? High collector current gain ? Improved efficiency due to reduced heat gene 文件：84.47 Kbytes 頁數(shù)：10 Pages	PHI PHI	PHI

技術(shù)參數(shù)

Package name：
TSOP6
Size (mm)：
2.9 x 1.5 x 1
Polarity：
NPN
Ptot (mW)：
600
VCEO [max] (V)：
50
IC [max] (mA)：
3000
hFE [min]：
200
Tj [max] (°C)：
150
fT [min] (MHz)：
100
Automotive qualified：
Y

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市勤思達(dá)科技有限公司	PBSS4350	恩XP	12+	TO-223	15000	全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。	詢價(jià)
深圳市華來深電子有限公司	PBSS4350	恩XP	23+	SOT-223	11846	一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十	詢價(jià)
深圳誠思涵科技有限公司	PBSS4350	恩XP	18+	TO-92	85600	保證進(jìn)口原裝可開17%增值稅發(fā)票	詢價(jià)
深圳市澳億芯電子科技有限公司	PBSS4350	恩XP	25+	SOT-223	20000	普通	詢價(jià)
深圳市河鋒鑫科技有限公司	PBSS4350	恩XP	2022+	SOT-223	20000	原廠代理終端免費(fèi)提供樣品	詢價(jià)
深圳市威雅利發(fā)展有限公司	PBSS4350	恩XP	04+	SOT-223	305	一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價(jià)
深圳市躍創(chuàng)芯科技有限公司	PBSS4350	恩XP	2022+	SOT-223	30000	進(jìn)口原裝現(xiàn)貨供應(yīng),絕對(duì)原裝假一罰十	詢價(jià)
上海磐岳電子有限公司	PBSS4350	恩XP	2023+	TO-92	5800	進(jìn)口原裝,現(xiàn)貨熱賣	詢價(jià)
深圳深宇韜電子科技有限公司	PBSS4350	恩XP	2023+	SOT-223	8800	正品渠道現(xiàn)貨終端可提供BOM表配單。	詢價(jià)
深圳市安富世紀(jì)電子有限公司	PBSS4350	恩XP	20+	SOT-223	32500	現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝	詢價(jià)

更多PBSS4350供應(yīng)商更新時(shí)間2026-1-22 11:04:00

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