SGT中低壓MOSFET

? High-Speed Switching\n? Low R DS(ON)\n? Low Gate Charge\n? Capable of 4.5 V Gate Drive\n? RoHS and Halogen-Free Compliant\n? 100% UIS and RG Tested;

MC-Power

民承

NCE N-Channel Enhancement Mode Power MOSFET

文件：443.85 Kbytes 頁(yè)數(shù)：7 Pages

NCEPOWER

新潔能

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6990D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =69V,ID =90A RDS(ON)

文件：440.05 Kbytes 頁(yè)數(shù)：7 Pages

NCEPOWER

新潔能

Inductors National?? 150 KHz SIMPLE SWITCHER

文件：61.65 Kbytes 頁(yè)數(shù)：1 Pages

FILTRAN

費(fèi)爾蘭特

Dual 30V N-Channel PowerTrench SyncFET

General Description The FDS6990S is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. Each MOSFET includes integrated Schottky dio

文件：86.9 Kbytes 頁(yè)數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

Dual N-Channel Logic Level PowerTrenchTM MOSFET

文件：119.4 Kbytes 頁(yè)數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體