NCE N-Channel Enhancement Mode Power MOSFET

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NCEPOWER

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12-200V N-Channel Trench MOSFET

The NCE6990 uses advanced trench technology and design to provide excellent R DS(ON) ?with low gate charge. It?can be used in a wide variety of applications. ? V DS =69V,I D =90AR DS(ON) < 7.0m? @ V GS =10V (Typ:5.7m?)? High density cell design for ultra low Rdson? Fully characterized avalanche voltage and current? Good stability and uniformity with high E AS? Excellent package for good heat dissipation? Special process technology for high ESD capability;

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絲印：NCE6990；Package：TO-220；LCE N-Channel Enhancement Mode Power MOSFET

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絲?。?a target="_blank" title="Marking" href="/nce6990d/marking.html">NCE6990D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6990D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =69V,ID =90A RDS(ON)

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NCEPOWER

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12-200V N-Channel Trench MOSFET

\n The NCE6990D uses advanced trench technology and design to provide excellent R DS(ON) ?with low gate charge. It can be used in a wide variety of applications. \n? V DS =69V,I D =90A\nR DS(ON) < 7.2m? @ V GS =10V (Typ:6.2m?)\n? High density cell design for ultra low Rdson\n? Fully characterized avalanche voltage and current\n? Good stability and uniformity with high E AS\n? Excellent package for good heat dissipation\n? Special process technology for high ;

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