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    首頁
                >MC14073B>規(guī)格書列表
                
    
            
    
                
    
                    
    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    MC14073BDG
    B-Suffix Series CMOS Gates
    
B-Suffix Series CMOS Gates
The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired.
Features
? Supply Voltage Range = 3.0 V
    文件：171.86 Kbytes 頁數(shù)：14 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    MC14073BDR2
    B-Suffix Series CMOS Gates
    
B-Suffix Series CMOS Gates
The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired.
Features
? Supply Voltage Range = 3.0 V
    文件：171.86 Kbytes 頁數(shù)：14 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    MC14073BDR2G
    B-Suffix Series CMOS Gates
    
B-Suffix Series CMOS Gates
The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired.
Features
? Supply Voltage Range = 3.0 V
    文件：171.86 Kbytes 頁數(shù)：14 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    MC14073BFEL
    B-Suffix Series CMOS Gates
    
B-Suffix Series CMOS Gates
The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired.
Features
? Supply Voltage Range = 3.0 V
    文件：171.86 Kbytes 頁數(shù)：14 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    MC14073BFELG
    B-Suffix Series CMOS Gates
    
B-Suffix Series CMOS Gates
The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired.
Features
? Supply Voltage Range = 3.0 V
    文件：171.86 Kbytes 頁數(shù)：14 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    MC14073BCP
    B-SUFFIX SERIES CMOS GATES
    文件：134.49 Kbytes 頁數(shù)：12 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    MC14073BCPG
    B-SUFFIX SERIES CMOS GATES
    文件：134.49 Kbytes 頁數(shù)：12 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    MC14073BD
    B-SUFFIX SERIES CMOS GATES
    文件：134.49 Kbytes 頁數(shù)：12 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    MC14073BDG
    B-SUFFIX SERIES CMOS GATES
    文件：134.49 Kbytes 頁數(shù)：12 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    MC14073BDG
    B-Suffix Series CMOS Gates
    文件：135.47 Kbytes 頁數(shù)：11 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    
            
    
		
        
    
            
    
                
    替換型號
    
            
    
            
            
        
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • Pb-free：
      Pb
    • Halide free：
      H
    • Status：
      Active
    • Type：
      AND
    • Channels：
      3
    • VCC Min (V)：
      3
    • VCC Max (V)：
      18
    • tpd Max (ns)：
      130
    • IO Max (mA)：
      null
    • Package Type：
      SOIC-14
    
            
    
        
    
            
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