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          首頁(yè) >MC1405>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          MC1405

          ANALOG - TO - DIGITAL CONVERTER SUBSYSTEM

          文件:758.84 Kbytes 頁(yè)數(shù):14 Pages

          MOTOROLA

          摩托羅拉

          MC14050B

          Hex Buffer

          The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P?Channel and N?Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

          文件:241.27 Kbytes 頁(yè)數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14050B

          Hex Buffer

          The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

          文件:106.06 Kbytes 頁(yè)數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14050BCP

          Hex Buffer

          The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

          文件:106.06 Kbytes 頁(yè)數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14050BCPG

          Hex Buffer

          The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

          文件:106.06 Kbytes 頁(yè)數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14050BD

          Hex Buffer

          The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

          文件:106.06 Kbytes 頁(yè)數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14050BDG

          Hex Buffer

          The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P?Channel and N?Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

          文件:241.27 Kbytes 頁(yè)數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14050BDR2

          Hex Buffer

          The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

          文件:106.06 Kbytes 頁(yè)數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14050BDR2G

          Hex Buffer

          The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P?Channel and N?Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

          文件:241.27 Kbytes 頁(yè)數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14050BDR2G

          Hex Buffer

          The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

          文件:106.06 Kbytes 頁(yè)數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • AEC Qualified:

            A

          • Halide free:

            H

          • PPAP Capablee:

            P

          • Status:

            Active

          • Channels:

            6

          • Output:

            CMOS

          • VCC Min (V):

            3

          • VCC Max (V):

            18

          • tpd Max (ns):

            80

          • IO Max (mA):

            16

          • Package Type:

            SOIC-16

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          更多MC1405供應(yīng)商 更新時(shí)間2026-1-19 16:21:00
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