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首頁 >MC14050>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
MC14050B	文件：106.06 Kbytes Page：8 Pages	Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes 文件：106.06 Kbytes 頁數(shù)：8 Pages	ONSEMI 安森美半導(dǎo)體	ONSEMI
MC14050B	文件：241.27 Kbytes Page：8 Pages	Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P?Channel and N?Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. 文件：241.27 Kbytes 頁數(shù)：8 Pages	ONSEMI 安森美半導(dǎo)體	ONSEMI
MC14050BCP	文件：106.06 Kbytes Page：8 Pages	Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes 文件：106.06 Kbytes 頁數(shù)：8 Pages	ONSEMI 安森美半導(dǎo)體	ONSEMI
MC14050BCPG	文件：106.06 Kbytes Page：8 Pages	Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes 文件：106.06 Kbytes 頁數(shù)：8 Pages	ONSEMI 安森美半導(dǎo)體	ONSEMI
MC14050BD	文件：106.06 Kbytes Page：8 Pages	Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes 文件：106.06 Kbytes 頁數(shù)：8 Pages	ONSEMI 安森美半導(dǎo)體	ONSEMI
MC14050BDG	文件：241.27 Kbytes Page：8 Pages	Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P?Channel and N?Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. 文件：241.27 Kbytes 頁數(shù)：8 Pages	ONSEMI 安森美半導(dǎo)體	ONSEMI
MC14050BDR2	文件：106.06 Kbytes Page：8 Pages	Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes 文件：106.06 Kbytes 頁數(shù)：8 Pages	ONSEMI 安森美半導(dǎo)體	ONSEMI
MC14050BDR2G	文件：106.06 Kbytes Page：8 Pages	Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes 文件：106.06 Kbytes 頁數(shù)：8 Pages	ONSEMI 安森美半導(dǎo)體	ONSEMI
MC14050BDR2G	文件：241.27 Kbytes Page：8 Pages	Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P?Channel and N?Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. 文件：241.27 Kbytes 頁數(shù)：8 Pages	ONSEMI 安森美半導(dǎo)體	ONSEMI
MC14050BDT	文件：106.06 Kbytes Page：8 Pages	Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes 文件：106.06 Kbytes 頁數(shù)：8 Pages	ONSEMI 安森美半導(dǎo)體	ONSEMI

產(chǎn)品屬性

產(chǎn)品編號(hào)：
MC14050BFEL
制造商：
onsemi
類別：
集成電路（IC） > 緩沖器，驅(qū)動(dòng)器，接收器，收發(fā)器
系列：
4000B
包裝：
卷帶（TR）
邏輯類型：
緩沖器，非反向
每個(gè)元件位數(shù)：
1
輸出類型：
推挽式
電流 - 輸出高、低：
10mA，40mA
電壓 - 供電：
3V ~ 18V
工作溫度：
-55°C ~ 125°C（TA）
安裝類型：
表面貼裝型
封裝/外殼：
16-SOIC（0.209"，5.30mm 寬）
供應(yīng)商器件封裝：
16-SOEIAJ
描述：
IC BUF NON-INVERT 18V 16SOEIAJ

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市高捷芯城科技有限公司	MC14050BFEL	onsemi	25+	16-SOEIAJ	21000	正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊	詢價(jià)
深圳市凌旭科技有限公司	MC14050BFEL	ON	2016+	SOP16	9000	只做原裝,假一罰十,公司可開17%增值稅發(fā)票!	詢價(jià)
深圳市一線半導(dǎo)體有限公司	MC14050BFEL	ONS	24+	SOP	2000		詢價(jià)
深圳市鵬和科技有限公司	MC14050BFEL	ON	24+	SOIC16	5000	只做原裝公司現(xiàn)貨	詢價(jià)
深圳市海天鴻電子科技有限公司	MC14050BFEL	ON	1651+	?	6500	只做原裝進(jìn)口,假一罰十	詢價(jià)
深圳市鼎盛源芯科技有限公司	MC14050BFEL	ON	16+	原廠封裝	10000	全新原裝正品,代理優(yōu)勢(shì)渠道供應(yīng),歡迎來電咨詢	詢價(jià)
深圳市華斯頓科技有限公司	MC14050BFEL	ON-SEMI	25+23+	New	34083	絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市華睿芯科技有限公司	MC14050BFEL	ON	24+	SOP16	20000	全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅！！	詢價(jià)
深圳市英卓爾科技有限公司	MC14050BFEL	ON	20+	SOP-16	2960	誠信交易大量庫存現(xiàn)貨	詢價(jià)
瀚佳科技(深圳)有限公司	MC14050BFEL	ON Semiconductor	24+	16-SOEIAJ	65200	一級(jí)代理/放心采購	詢價(jià)

更多MC14050供應(yīng)商更新時(shí)間2026-1-20 23:00:00

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