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          首頁 >MC14023>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MC14023

          B-Suffix Series CMOS Gates

          B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

          文件:261.47 Kbytes 頁數(shù):12 Pages

          ONSEMI

          安森美半導體

          MC14023B

          B-Suffix Series CMOS Gates

          B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

          文件:261.47 Kbytes 頁數(shù):12 Pages

          ONSEMI

          安森美半導體

          MC14023B

          B-Suffix Series CMOS Gates

          TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

          文件:327.76 Kbytes 頁數(shù):11 Pages

          MOTOROLA

          摩托羅拉

          MC14023BCL

          B-Suffix Series CMOS Gates

          TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

          文件:327.76 Kbytes 頁數(shù):11 Pages

          MOTOROLA

          摩托羅拉

          MC14023BCP

          B-Suffix Series CMOS Gates

          TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

          文件:327.76 Kbytes 頁數(shù):11 Pages

          MOTOROLA

          摩托羅拉

          MC14023BCP

          B-Suffix Series CMOS Gates

          B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

          文件:171.86 Kbytes 頁數(shù):14 Pages

          ONSEMI

          安森美半導體

          MC14023BCPG

          B-Suffix Series CMOS Gates

          B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

          文件:171.86 Kbytes 頁數(shù):14 Pages

          ONSEMI

          安森美半導體

          MC14023BD

          B-Suffix Series CMOS Gates

          TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

          文件:327.76 Kbytes 頁數(shù):11 Pages

          MOTOROLA

          摩托羅拉

          MC14023BD

          B-Suffix Series CMOS Gates

          B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

          文件:171.86 Kbytes 頁數(shù):14 Pages

          ONSEMI

          安森美半導體

          MC14023BDG

          B-Suffix Series CMOS Gates

          B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

          文件:171.86 Kbytes 頁數(shù):14 Pages

          ONSEMI

          安森美半導體

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • AEC Qualified:

            A

          • Halide free:

            H

          • PPAP Capablee:

            P

          • Status:

            Active

          • Type:

            NAND

          • Channels:

            3

          • VCC Min (V):

            3

          • VCC Max (V):

            18

          • tpd Max (ns):

            130

          • IO Max (mA):

            null

          • Package Type:

            SOIC-14

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          更多MC14023供應商 更新時間2026-1-17 16:40:00
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