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          首頁 >MC140>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MC14011BDR2

          B-Suffix Series CMOS Gates

          B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

          文件:171.86 Kbytes 頁數(shù):14 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14011BDR2G

          B-Suffix Series CMOS Gates

          B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

          文件:171.86 Kbytes 頁數(shù):14 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14011BDTR2

          B-Suffix Series CMOS Gates

          B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

          文件:171.86 Kbytes 頁數(shù):14 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14011BDTR2G

          B-Suffix Series CMOS Gates

          B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

          文件:171.86 Kbytes 頁數(shù):14 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14011BF

          B-Suffix Series CMOS Gates

          B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

          文件:171.86 Kbytes 頁數(shù):14 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14011BFEL

          B-Suffix Series CMOS Gates

          B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

          文件:171.86 Kbytes 頁數(shù):14 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14011BFELG

          B-Suffix Series CMOS Gates

          B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

          文件:171.86 Kbytes 頁數(shù):14 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14011BFG

          B-Suffix Series CMOS Gates

          B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

          文件:171.86 Kbytes 頁數(shù):14 Pages

          ONSEMI

          安森美半導(dǎo)體

          MC14011N

          MC14009N

          [UNITRA CEMI]

          文件:366.59 Kbytes 頁數(shù):5 Pages

          ETCList of Unclassifed Manufacturers

          未分類制造商

          MC14011UBCP

          UB-Suffix Series CMOS Gates

          The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non?buffered functions.

          文件:216.43 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • AEC Qualified:

            A

          • Halide free:

            H

          • PPAP Capablee:

            P

          • Status:

            Active

          • Type:

            D-Type

          • Channels:

            2

          • VCC Min (V):

            3

          • VCC Max (V):

            18

          • tpd Max (ns):

            150

          • IO Max (mA):

            2.25

          • Package Type:

            SOIC-14

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          25+
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          18000
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          A
          24+
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          4
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          24+
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          2987
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          更多MC140供應(yīng)商 更新時(shí)間2026-1-20 16:48:00
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