絲?。?strong>MBRB20200CT；Package：TO-263；Schottky Diodes

FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃

文件：1.00405 Mbytes 頁數(shù)：3 Pages

RFE

RFE international

絲?。?strong>MBRB20200CT；Package：TO-263；20A Surface Mount High Power Schottky Barrier Rectifiers

Features ? Low power loss, high efficiency. ? High current capability, low forward voltage drop. ? High surge capability. ? Guardring for overvoltage protection. ? Ultra high-speed switching. ? Silicon epitaxial planar chip, metal silicon junction. ? Suffix G indicates Halogen-free part, ex

文件：101.81 Kbytes 頁數(shù)：3 Pages

CITC

竹懋科技

絲?。?strong>MBRB20200CT；Package：TO-263；20A Surface Mount High Power Schottky Barrier Rectifiers

Features ? Low power loss, high efficiency. ? High current capability, low forward voltage drop. ? High surge capability. ? Guardring for overvoltage protection. ? Ultra high-speed switching. ? Silicon epitaxial planar chip, metal silicon junction. ? Suffix G indicates Halogen-free part, ex

文件：101.81 Kbytes 頁數(shù)：3 Pages

CITC

竹懋科技

絲?。?strong>MBRB20200CT；Package：TO-263；Schottky Diodes

FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃

文件：1.00405 Mbytes 頁數(shù)：3 Pages

RFE

RFE international

絲?。?a target="_blank" title="Marking" href="/mbr20200cts/marking.html">MBR20200CTS；Package：TO-263；Schottky Diodes

FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃

文件：1.01261 Mbytes 頁數(shù)：3 Pages

RFE

RFE international

SCHOTTKY BARRIER RECTIFIERS

Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction

文件：1.96308 Mbytes 頁數(shù)：2 Pages

SUNMATE

森美特

SWITCHMODE Power Rectifier Dual Schottky Rectifier

This device uses the Schottky Barrier technology with a platinum barrier metal. This state?of?the?art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250

文件：62.82 Kbytes 頁數(shù)：5 Pages

ONSEMI

安森美半導體

SWIRCHMODE?? Power Dual Schottky Rectifier

. . . using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs. They block up to 200 volts and offer improved Schottky performance at frequencies from 250 k

文件：82.07 Kbytes 頁數(shù)：4 Pages

MOTOROLA

摩托羅拉

SWITCHMODE Power Rectifier Dual Schottky Rectifier

This device uses the Schottky Barrier technology with a platinum barrier metal. This state?of?the?art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250

文件：62.82 Kbytes 頁數(shù)：5 Pages

ONSEMI

安森美半導體

SWITCHMODE Power Rectifier

This device uses the Schottky Barrier technology with a platinum barrier metal. This state?of?the?art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250

文件：148.01 Kbytes 頁數(shù)：5 Pages

ONSEMI

安森美半導體