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          首頁(yè) >絲印反查>MBRB20200CT

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          MBRB20200CT

          絲?。?strong>MBRB20200CT;Package:TO-263;Schottky Diodes

          FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃

          文件:1.00405 Mbytes 頁(yè)數(shù):3 Pages

          RFE

          RFE international

          MBRB20200CT

          絲印:MBRB20200CT;Package:TO-263;20A Surface Mount High Power Schottky Barrier Rectifiers

          Features ? Low power loss, high efficiency. ? High current capability, low forward voltage drop. ? High surge capability. ? Guardring for overvoltage protection. ? Ultra high-speed switching. ? Silicon epitaxial planar chip, metal silicon junction. ? Suffix G indicates Halogen-free part, ex

          文件:101.81 Kbytes 頁(yè)數(shù):3 Pages

          CITC

          竹懋科技

          MBRB20200CT

          絲?。?strong>MBRB20200CT;Package:TO-263;20A Surface Mount High Power Schottky Barrier Rectifiers

          Features ? Low power loss, high efficiency. ? High current capability, low forward voltage drop. ? High surge capability. ? Guardring for overvoltage protection. ? Ultra high-speed switching. ? Silicon epitaxial planar chip, metal silicon junction. ? Suffix G indicates Halogen-free part, ex

          文件:101.81 Kbytes 頁(yè)數(shù):3 Pages

          CITC

          竹懋科技

          MBRB20200CT

          絲?。?strong>MBRB20200CT;Package:TO-263;Schottky Diodes

          FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃

          文件:1.00405 Mbytes 頁(yè)數(shù):3 Pages

          RFE

          RFE international

          MBRB20200CTS

          絲?。?a target="_blank" title="Marking" href="/mbr20200cts/marking.html">MBR20200CTS;Package:TO-263;Schottky Diodes

          FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃

          文件:1.01261 Mbytes 頁(yè)數(shù):3 Pages

          RFE

          RFE international

          MBRB20200CT

          SCHOTTKY BARRIER RECTIFIERS

          Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction

          文件:1.96308 Mbytes 頁(yè)數(shù):2 Pages

          SUNMATE

          森美特

          MBRB20200CT

          SWITCHMODE Power Rectifier Dual Schottky Rectifier

          This device uses the Schottky Barrier technology with a platinum barrier metal. This state?of?the?art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250

          文件:62.82 Kbytes 頁(yè)數(shù):5 Pages

          ONSEMI

          安森美半導(dǎo)體

          MBRB20200CT

          SWIRCHMODE?? Power Dual Schottky Rectifier

          . . . using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs. They block up to 200 volts and offer improved Schottky performance at frequencies from 250 k

          文件:82.07 Kbytes 頁(yè)數(shù):4 Pages

          MOTOROLA

          摩托羅拉

          MBRB20200CTG

          SWITCHMODE Power Rectifier Dual Schottky Rectifier

          This device uses the Schottky Barrier technology with a platinum barrier metal. This state?of?the?art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250

          文件:62.82 Kbytes 頁(yè)數(shù):5 Pages

          ONSEMI

          安森美半導(dǎo)體

          MBRB20200CTG

          SWITCHMODE Power Rectifier

          This device uses the Schottky Barrier technology with a platinum barrier metal. This state?of?the?art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250

          文件:148.01 Kbytes 頁(yè)數(shù):5 Pages

          ONSEMI

          安森美半導(dǎo)體

          詳細(xì)參數(shù)

          • 型號(hào):

            MBRB20200CT

          • 功能描述:

            肖特基二極管與整流器 20A 200

          • RoHS:

          • 制造商:

            Skyworks Solutions, Inc.

          • 產(chǎn)品:

            Schottky Diodes

          • 峰值反向電壓:

            2 V

          • 正向連續(xù)電流:

            50 mA

          • 配置:

            Crossover Quad

          • 正向電壓下降:

            370 mV

          • 最大功率耗散:

            75 mW

          • 工作溫度范圍:

            - 65 C to + 150 C

          • 安裝風(fēng)格:

            SMD/SMT

          • 封裝/箱體:

            SOT-143

          • 封裝:

            Reel

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          更多MBRB20200CT供應(yīng)商 更新時(shí)間2026-1-18 11:01:00
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