| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition 文件：35.03 Kbytes 頁(yè)數(shù)：2 Pages | HY 虹揚(yáng)科技 | HY | ||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition 文件：39.46 Kbytes 頁(yè)數(shù)：2 Pages | HY 虹揚(yáng)科技 | HY | ||
SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 3.0A DESCRIPTION The MBR 3 20 F ~MBR 3 200 F are available in SOD 123FL Pa ckage FEATURES ? Plastic package has Underwriters Laboratory Flammability Classification 94V 0 ? Low power loss, high efficiency ? For use in low voltage high frequency inverters, free wheeling, and polarity protecti 文件：483.58 Kbytes 頁(yè)數(shù)：5 Pages | AITSEMI 創(chuàng)瑞科技 | AITSEMI | ||
Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low?voltage, high?frequency inverters, free wheeling 文件：57.32 Kbytes 頁(yè)數(shù)：4 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low?voltage, high?frequency inverters, free whee 文件：168.5 Kbytes 頁(yè)數(shù)：6 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low?voltage, high?frequency inverters, free whee 文件：168.5 Kbytes 頁(yè)數(shù)：6 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Schottky Rectifier, 3 A DESCRIPTION The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES ? Low profile, axial leaded 文件：84.26 Kbytes 頁(yè)數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L 文件：288.24 Kbytes 頁(yè)數(shù)：2 Pages | DCCOM 道全 | DCCOM | ||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition 文件：35.03 Kbytes 頁(yè)數(shù)：2 Pages | HY 虹揚(yáng)科技 | HY | ||
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L 文件：288.24 Kbytes 頁(yè)數(shù)：2 Pages | DCCOM 道全 | DCCOM |
技術(shù)參數(shù)
- Pb-free：
Pb
- Halide free：
H
- Status：
Active
- Configuration：
Single
- VRRM Min (V)：
50
- VF Max (V)：
0.74
- IRM Max (μA)：
600
- IO(rec) Max (A)：
3
- IFSM Max (A)：
80
- Package Type：
Axial Lead-2
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MOTOROLA |
25+ |
DO-5 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢(xún)價(jià) | ||
ON |
24+/25+ |
860 |
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu) |
詢(xún)價(jià) | |||
MCC |
25+ |
N/A |
15 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢(xún)價(jià) | ||
ON |
24+ |
90000 |
詢(xún)價(jià) | ||||
MOTOROLA |
24+ |
DO-5 |
5000 |
原裝現(xiàn)貨假一罰十 |
詢(xún)價(jià) | ||
SUNMATE(森美特) |
2019+ROHS |
DO-201AD |
66688 |
森美特高品質(zhì)產(chǎn)品原裝正品免費(fèi)送樣 |
詢(xún)價(jià) | ||
ON |
1650+ |
? |
7500 |
只做原裝進(jìn)口,假一罰十 |
詢(xún)價(jià) | ||
ON |
25+ |
DIP |
2658 |
原裝正品!現(xiàn)貨供應(yīng)! |
詢(xún)價(jià) | ||
MOTOROLA |
專(zhuān)業(yè)鐵帽 |
DO-5 |
5000 |
原裝鐵帽專(zhuān)營(yíng),代理渠道量大可訂貨 |
詢(xún)價(jià) | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢(xún)價(jià) |
相關(guān)規(guī)格書(shū)
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- NE5532
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- NE5532A
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- SI7970DP
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- SI7946DP
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- SI7921DN
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- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
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