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          首頁(yè) >MBR35>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          MBR35

          3.0A 50V Schottky diode

          文件:376.203 Kbytes 頁(yè)數(shù):2 Pages

          SUNMATE

          森美特

          PDF上傳者:深圳冠榮電子有限公司

          MBR350

          SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40, 50, 60 VOLTS

          Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverte

          文件:121.56 Kbytes 頁(yè)數(shù):6 Pages

          MOTOROLA

          摩托羅拉

          MBR350

          Axial Lead Rectifiers

          These devices employ the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low?voltage, high?frequency inverters, free wheeling

          文件:57.32 Kbytes 頁(yè)數(shù):4 Pages

          ONSEMI

          安森美半導(dǎo)體

          MBR350

          Axial Lead Rectifiers

          These devices employ the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low?voltage, high?frequency inverters, free whee

          文件:168.5 Kbytes 頁(yè)數(shù):6 Pages

          ONSEMI

          安森美半導(dǎo)體

          MBR350

          Schottky Rectifier, 3 A

          DESCRIPTION The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES ? Low profile, axial leaded

          文件:84.26 Kbytes 頁(yè)數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          MBR350

          SCHOTTKY RECTIFIER

          Description/ Features The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. ? Low profile, axial leade

          文件:33.77 Kbytes 頁(yè)數(shù):5 Pages

          IRF

          MBR350

          SCHOTTKY BARRIER RECTIFIERS

          VOLTAGE 40 to 200 Volt CURRENT 3 Ampere FEATURES ? Guard Ring Die Construction for Transient Protection ? Low Power Loss, High Efficiency ? High Surge Capability ? High Current Capability and Low Forward Voltage Drop ? Surge Overload Rating to 80A Peak ? For Use in Low Voltage, High Frequen

          文件:70.26 Kbytes 頁(yè)數(shù):2 Pages

          PANJIT

          強(qiáng)茂

          MBR350

          3A SCHOTTKY RECTIFIER

          3A SCHOTTKY RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

          文件:201.14 Kbytes 頁(yè)數(shù):3 Pages

          DIGITRON

          MBR350

          3.0A SCHOTTKY BARRIER DIODE

          Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

          文件:135.95 Kbytes 頁(yè)數(shù):2 Pages

          ZSELEC

          淄博圣諾

          MBR350_V01

          Axial Lead Rectifiers

          These devices employ the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low?voltage, high?frequency inverters, free whee

          文件:168.5 Kbytes 頁(yè)數(shù):6 Pages

          ONSEMI

          安森美半導(dǎo)體

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • Halide free:

            H

          • Status:

            Active

          • Configuration:

            Single

          • VRRM Min (V):

            50

          • VF Max (V):

            0.74

          • IRM Max (μA):

            600

          • IO(rec) Max (A):

            3

          • IFSM Max (A):

            80

          • Package Type:

            Axial Lead-2

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
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          SUNMATE(森美特)
          2019+ROHS
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          66688
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          專(zhuān)業(yè)鐵帽
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          更多MBR35供應(yīng)商 更新時(shí)間2026-1-17 16:18:00
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