20 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features ? Meatl of Silicon Rectifier, Majority Conducton ? Guard ring for transient protection ? Low Forward Voltage Drop ? High Current Capability, High Efficiency ? Low Power Loss

文件：67.54 Kbytes 頁數(shù)：2 Pages

MCC

Schottky Barrier Rectifiers

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

文件：139.82 Kbytes 頁數(shù)：2 Pages

MOSPEC

統(tǒng)懋

SWITCHMODE?? Power Rectifiers

SWITCHMODE? Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: ? Guardring for Stress Protection ? Low Forward Voltage ? 150°C Operating Junction Temperature ? Guaranteed Reverse Avalanche ? E

文件：135.29 Kbytes 頁數(shù)：6 Pages

MOTOROLA

摩托羅拉

Schottky Diode

Features: ? Plastic material ? Metal silicon junction, majority carrier conduction ? Low power loss, high efficiency ? High current capability, low forward voltage drop ? High surge capability ? For use in low voltage, high frequency inverters, free wheeling, and polarity protection applicat

文件：370.01 Kbytes 頁數(shù)：4 Pages

MULTICOMP

易絡盟

20.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

文件：102.23 Kbytes 頁數(shù)：2 Pages

TSC

臺灣半導體

20.0 AMPS. Schottky Barrier Rectifiers

Features ☆ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ☆ Metal silicon junction, majority carrier conduction ☆ Low power loss, high efficiency ☆ High current capability, low forward voltage drop ☆ High surge capability ☆ For use in low voltage, high frequency

文件：356.3 Kbytes 頁數(shù)：2 Pages

TSC

臺灣半導體

SCHOTTKY RECTIFIER

Reverse Voltage - 35 to 60 Volts Forward Current - 20.0 Amperes FEATURES ? Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ? Dual rectifier construction, positive center tap ? Metal silicon junction, majority carrier conduction ? Low power loss, high efficien

文件：81.75 Kbytes 頁數(shù)：2 Pages

GE

SCHOTTKY RECTIFIER 20 Amp

Description/ Features This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheel

文件：173.17 Kbytes 頁數(shù)：7 Pages

IRF

Schottky Barrier Rectifier

FEATURES ? Dual Rectifier Conduction, Positive Center Tap ? Metal Silicon Junction, Majority Carrier Conduction ? Low Power Loss/High Efficiency ? High Current Capability, Low Forward Voltage Drop ? High Surge Capacity ? Guarding for Overvoltage protection ? For Use in Low Voltage, High Fre

文件：135.82 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

SCHOTTKY BARRIER RECTIFIER

SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheelin

文件：195.87 Kbytes 頁數(shù)：3 Pages

JIANGSU

長電科技