Schottky Rectifiers

Features ? Low power loss, high efficiency. ? High surge capacity. ? For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ? Metal silicon junction, majority carrier conduction. ? High current capacity, low forward voltage drop. ? Guard ring f

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FAIRCHILD

仙童半導體

SWITCHMODE Power Rectifier

SWITCHMODE? Power Rectifier Features and Benefits ? Low Forward Voltage ? Low Power Loss / High Efficiency ? High Surge Capacity ? 175°C Operating Junction Temperature ? 20 A Total (10 A Per Diode Leg) ? Pb?Free Package is Available* Applications ? Power Supply ? Output Rectification ? P

文件：111.85 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導體

Dual Common-Cathode Schottky Rectifier

FEATURES ? Guardring for overvoltage protection ? Lower power losses, high efficiency ? Low forward voltage drop ? High forward surge capability ? High frequency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 260 °C, 40 s (for TO-

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VISHAYVishay Siliconix

威世威世科技公司

SCHOTTKY BARRIER TYPE DIODE

SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES ? Average Output Rectified Current : IO=20A. ? Repetitive Peak Reverse Voltage : VRRM=45V. ? Fast Reverse Recovery Time : trr=35ns.

文件：441.89 Kbytes 頁數(shù)：2 Pages

KEC

KEC(Korea Electronics)

20A SCHOTTKY BARRIER RECTIFIER

Features ? Schottky Barrier Chip ? Guard Ring Die Construction for Transient Protection ? Low Power Loss, High Efficiency ? High Surge Capability ? High Current Capability and Low Forward Voltage Drop ? For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

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DIODES

美臺半導體

20 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features ? Meatl of Silicon Rectifier, Majority Conducton ? Guard ring for transient protection ? Low Forward Voltage Drop ? High Current Capability, High Efficiency ? Low Power Loss

文件：67.54 Kbytes 頁數(shù)：2 Pages

MCC

Schottky Diode

Features: ? Plastic material ? Metal silicon junction, majority carrier conduction ? Low power loss, high efficiency ? High current capability, low forward voltage drop ? High surge capability ? For use in low voltage, high frequency inverters, free wheeling, and polarity protection applicat

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MULTICOMP

易絡盟

20.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

文件：102.23 Kbytes 頁數(shù)：2 Pages

TSC

臺灣半導體

20.0 AMPS. Schottky Barrier Rectifiers

Features ☆ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ☆ Metal silicon junction, majority carrier conduction ☆ Low power loss, high efficiency ☆ High current capability, low forward voltage drop ☆ High surge capability ☆ For use in low voltage, high frequency

文件：356.3 Kbytes 頁數(shù)：2 Pages

TSC

臺灣半導體

Schottky Barrier Rectifiers

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

文件：139.82 Kbytes 頁數(shù)：2 Pages

MOSPEC

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