| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>MAT；Package：DO-214AC；400W Transient Voltage Suppressor (TVS) protection device Description and applications This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response time of clamping action is virtual 文件：489.87 Kbytes 頁數(shù)：6 Pages | MICROSEMI 美高森美 | MICROSEMI | ||
MAT | MANUAL PHASE ANGLE TRIAC TRIGGER MODULE FEATURES ? Compact and easy to use ? Solid state reliability ? Single hole panel mounting ? Minimum offset ? Highly efficient 文件：56.45 Kbytes 頁數(shù)：1 Pages | UNITEDAUTOMATION | UNITEDAUTOMATION | |
Matched Monolithic Dual Transistor GENERAL DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 μV, temperature drift of 0.15 μV/° 文件：119.82 Kbytes 頁數(shù)：8 Pages | AD 亞德諾 | AD | ||
Matched Monolithic Dual Transistor GENERAL DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 μV, temperature drift of 0.15 μV/° 文件：261.459 Kbytes 頁數(shù)：12 Pages | AD 亞德諾 | AD | ||
Matched Monolithic Dual Transistor FEATURES Low VOS (VBE match): 40 μV typical, 100 μV maximum Low TCVOS: 0.5 μV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 μV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end C 文件：235.33 Kbytes 頁數(shù)：12 Pages | AD 亞德諾 | AD | ||
Matched Monolithic Dual Transistor FEATURES Low VOS (VBE match): 40 μV typical, 100 μV maximum Low TCVOS: 0.5 μV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 μV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end C 文件：235.33 Kbytes 頁數(shù)：12 Pages | AD 亞德諾 | AD | ||
Matched Monolithic Dual Transistor FEATURES Low VOS (VBE match): 40 μV typical, 100 μV maximum Low TCVOS: 0.5 μV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 μV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end C 文件：235.33 Kbytes 頁數(shù)：12 Pages | AD 亞德諾 | AD | ||
Matched Monolithic Dual Transistor GENERAL DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 μV, temperature drift of 0.15 μV/° 文件：119.82 Kbytes 頁數(shù)：8 Pages | AD 亞德諾 | AD | ||
Matched Monolithic Dual Transistor FEATURES Low VOS (VBE match): 40 μV typical, 100 μV maximum Low TCVOS: 0.5 μV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 μV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end C 文件：235.33 Kbytes 頁數(shù)：12 Pages | AD 亞德諾 | AD | ||
Matched Monolithic Dual Transistor FEATURES Low VOS (VBE match): 40 μV typical, 100 μV maximum Low TCVOS: 0.5 μV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 μV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end C 文件：235.33 Kbytes 頁數(shù)：12 Pages | AD 亞德諾 | AD |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Microsemi |
1942+ |
N/A |
908 |
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物 |
詢價(jià) | ||
VISHAY |
08+ |
DO-214AC |
98000 |
絕對全新原裝強(qiáng)調(diào)只做全新原裝現(xiàn) |
詢價(jià) | ||
VIS |
24+ |
1800 |
詢價(jià) | ||||
VISHAY |
23+ |
DO-214A |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
VISHAY/威世 |
2447 |
SMA |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價(jià) | ||
VISHAY |
25+ |
DO-214 |
6985 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
VISHAY/威世 |
23+ |
DO-214AC |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
VISHAY |
24+ |
DO-214AC |
12500 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
VISHAY/威世 |
2022+ |
DO-214AC |
33500 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
VISHAY |
DO-214AC(SMA) |
130000 |
一級代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨 |
詢價(jià) |
相關(guān)芯片絲印
更多- SMAJ9.0E3
- SMAJ10E3
- KTD1304
- SMAJ10AE3
- MAX14916AAFM+T
- MAX14916AFM+T
- MAX16491GCS+T
- MAX207CDWR
- MAX207IDWR
- MAX208CDWR.A
- MAX208CDW.A
- MAX208CDWR
- MAX208IDW.A
- MAX208IDWR
- MAX211CDBR
- MAX211CDW
- MAX211IDBR
- MAX211IDBRG4
- MAX211IDWR
- MAX211IDB
- MAX213CDW.A
- MAX213CDWR.A
- MAX213CDBR
- MAX213IDBR
- MAX213IDWR.A
- MAX3222CDWR
- MAX3222ECDWR
- MAX3222EIDWR
- MAX3222IDWR
- MAX3223CDWR
- MAX3223CDW
- MAX3223ECDW.A
- MAX3223ECDWR.A
- MAX3223EIDW.A
- MAX3223EIDWR.A
- MAX3223IDWR
- MAX3223IDW
- MAX3232CDW
- MAX3232CDR1G4
- MAX3232CDR
- MAX3232IDWR.B
- MAX3232IDW
- MAX3237ECDB
- MAX3237ECDBR.A
- MAX3237ECDW.A
相關(guān)庫存
更多- SMAJ9.0AE3
- KTD1304
- KTD1304
- MAX14916AAFM+
- MAX14916AFM+
- MAX16491GCS+
- MAX207CDW
- MAX207IDW
- MAX207IDWR.A
- MAX208CDW
- MAX208CDW.B
- MAX208IDW
- MAX208IDW.B
- MAX208IDWR.A
- MAX211CDWR.A
- MAX211CDWR
- MAX211IDBR.A
- MAX211IDW
- MAX211IDWR.A
- MAX213CDW
- MAX213CDWR
- MAX213CDB
- MAX213IDB
- MAX213IDWR
- MAX3222CDW
- MAX3222ECDW
- MAX3222EIDW
- MAX3222IDW
- MAX3223CDWR.A
- MAX3223CDW.A
- MAX3223ECDW
- MAX3223ECDWR
- MAX3223EIDW
- MAX3223EIDWR
- MAX3223IDWR.A
- MAX3223IDW.A
- MAX3232CDWR
- MAX3232CDR1G4.A
- MAX3232CDR.A
- MAX3232CD
- MAX3232IDRG4
- MAX3232IDWR
- MAX3237ECDBR
- MAX3237ECDW
- MAX3237ECDWG4
