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          首頁 >MAT01>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MAT01

          Matched Monolithic Dual Transistor

          GENERAL DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 μV, temperature drift of 0.15 μV/°

          文件:119.82 Kbytes 頁數(shù):8 Pages

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          MAT01

          Matched Monolithic Dual Transistor

          GENERAL DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 μV, temperature drift of 0.15 μV/°

          文件:261.459 Kbytes 頁數(shù):12 Pages

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          MAT01

          Matched Monolithic Dual Transistor

          FEATURES Low VOS (VBE match): 40 μV typical, 100 μV maximum Low TCVOS: 0.5 μV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 μV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end C

          文件:235.33 Kbytes 頁數(shù):12 Pages

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          MAT01_V01

          Matched Monolithic Dual Transistor

          FEATURES Low VOS (VBE match): 40 μV typical, 100 μV maximum Low TCVOS: 0.5 μV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 μV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end C

          文件:235.33 Kbytes 頁數(shù):12 Pages

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          MAT01AH

          Matched Monolithic Dual Transistor

          FEATURES Low VOS (VBE match): 40 μV typical, 100 μV maximum Low TCVOS: 0.5 μV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 μV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end C

          文件:235.33 Kbytes 頁數(shù):12 Pages

          AD

          亞德諾

          MAT01AH

          Matched Monolithic Dual Transistor

          GENERAL DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 μV, temperature drift of 0.15 μV/°

          文件:119.82 Kbytes 頁數(shù):8 Pages

          AD

          亞德諾

          MAT01AHZ

          Matched Monolithic Dual Transistor

          FEATURES Low VOS (VBE match): 40 μV typical, 100 μV maximum Low TCVOS: 0.5 μV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 μV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end C

          文件:235.33 Kbytes 頁數(shù):12 Pages

          AD

          亞德諾

          MAT01GH

          Matched Monolithic Dual Transistor

          GENERAL DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 μV, temperature drift of 0.15 μV/°

          文件:119.82 Kbytes 頁數(shù):8 Pages

          AD

          亞德諾

          MAT01GH

          Matched Monolithic Dual Transistor

          FEATURES Low VOS (VBE match): 40 μV typical, 100 μV maximum Low TCVOS: 0.5 μV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 μV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end C

          文件:235.33 Kbytes 頁數(shù):12 Pages

          AD

          亞德諾

          MAT01GHZ

          Matched Monolithic Dual Transistor

          FEATURES Low VOS (VBE match): 40 μV typical, 100 μV maximum Low TCVOS: 0.5 μV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 μV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end C

          文件:235.33 Kbytes 頁數(shù):12 Pages

          AD

          亞德諾

          詳細(xì)參數(shù)

          • 型號:

            MAT01

          • 制造商:

            AD

          • 制造商全稱:

            Analog Devices

          • 功能描述:

            Matched Monolithic Dual Transistor

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          更多MAT01供應(yīng)商 更新時間2026-1-18 8:31:00
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