High power density 600V half-bridge driver with two enhancement mode GaN Power HEMT

Features ? 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors: – QFN 9 x 9 x 1 mm package – RDS(ON) = 225 m? – IDS(MAX) = 6.5 A ? Reverse current capability ? Zero reverse recovery loss ? UVLO protection on low-side and high-side ? Internal

文件：396.45 Kbytes 頁(yè)數(shù)：14 Pages

STMICROELECTRONICS

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High power density 600V half-bridge driver with two enhancement mode GaN Power HEMT

Features ? 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors: – QFN 9 x 9 x 1 mm package – RDS(ON) = 225 m? – IDS(MAX) = 6.5 A ? Reverse current capability ? Zero reverse recovery loss ? UVLO protection on low-side and high-side ? Internal

文件：396.45 Kbytes 頁(yè)數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

High power density 600V half-bridge driver with two enhancement mode GaN HEMTs

The MASTERGAN4 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in half bridge configuration. The integrated power GaNs have 650?V drain-source blocking voltage and RDS(ON) of 225 m?, while the high side of the embedded gate driver can b ? 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors: \n ?QFN 9 x 9 x 1 mm package \n ?RDS(ON)?=?225 m? \n ?IDS(MAX)?=?6.5 A \n? Reverse current capability \n? Zero reverse recovery loss \n? UVLO protection on low-side and high-side \n? Internal bootst;

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Package：31-VQFN 裸露焊盤；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：集成電路（IC） 全半橋驅(qū)動(dòng)器 描述：HIGH POWER DENSITY 600V HALF BRI

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600 V half-bridge enhancement mode GaN HEMT with high voltage driver

The MASTERGAN4L is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half?bridge configuration.\n\n The integrated power GaNs have respectively RDS(ON) of 225 m?, 650 V drain?source blocking voltage, while the high side of the embedded gate dri ? 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors: \n ?QFN 9 x 9 x 1 mm package \n ?RDS(ON) = 225 m? \n ?IDS(MAX) = 6.5 A \n? Reverse current capability \n? Zero reverse recovery loss \n? UVLO protection on VCC \n? Internal bootstrap diode \n? Inter;

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