600 V half-bridge enhancement mode GaN HEMT with high voltage driver

The MASTERGAN4L is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half?bridge configuration.\n\n The integrated power GaNs have respectively RDS(ON) of 225 m?, 650 V drain?source blocking voltage, while the high side of the embedded gate dri ? 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors: \n ?QFN 9 x 9 x 1 mm package \n ?RDS(ON) = 225 m? \n ?IDS(MAX) = 6.5 A \n? Reverse current capability \n? Zero reverse recovery loss \n? UVLO protection on VCC \n? Internal bootstrap diode \n? Inter;

ST

意法半導(dǎo)體

SMD

M/A-COM

上傳：深圳市科恒偉業(yè)電子有限公司

MACOM

上傳：兆億微波(北京)科技有限公司

MACOM

上傳：兆億微波(北京)科技有限公司

國(guó)產(chǎn)代替

上傳：深圳市瀚瓏科技有限公司