SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

Description The MA4E2501L-1290 SurMount? Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts

文件：60.64 Kbytes 頁(yè)數(shù)：3 Pages

MA-COM

Low Barrier Si Single

The MA4E2501L-1290 SURMOUNT Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC?) process. HMIC? circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low di ·Extremely Low Parasitic Capacitance and Inductance\n·Available in Pocket Tape and Reel\n·Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300°C, 16 hours)\n·Rugged HMIC Construction with Polyimide Scratch Protection\n·Surface Mountable in Microwave Circuits. ;

MACOM

Package：模具；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類(lèi)別：分立半導(dǎo)體產(chǎn)品 二極管 - 射頻 描述：SCHOTTKY.SURMOUNT,SINGLE,SI

MACOM Technology Solutions