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          首頁 >MA4E2501>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MA4E2501

          SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

          Description The MA4E2501L-1290 SurMount? Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts

          文件:60.64 Kbytes 頁數(shù):3 Pages

          MA-COM

          MA4E2501

          SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

          MACOM

          MA4E2501-1290

          SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

          Description and Applications The MA4E2501L-1290 SurMount? Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele

          文件:106.71 Kbytes 頁數(shù):3 Pages

          MACOM

          MA4E2501-1290

          SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

          Description The MA4E2501L-1290 SurMount? Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts

          文件:60.64 Kbytes 頁數(shù):3 Pages

          MA-COM

          MA4E2501L-

          SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

          Description The MA4E2501L-1290 SurMount? Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts

          文件:60.64 Kbytes 頁數(shù):3 Pages

          MA-COM

          MA4E2501L-1290

          SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

          Description The MA4E2501L-1290 SurMount? Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts

          文件:60.64 Kbytes 頁數(shù):3 Pages

          MA-COM

          MA4E2501L-1290

          SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

          Description and Applications The MA4E2501L-1290 SurMount? Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele

          文件:106.71 Kbytes 頁數(shù):3 Pages

          MACOM

          MA4E2501L-1290T

          SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

          Description and Applications The MA4E2501L-1290 SurMount? Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele

          文件:106.71 Kbytes 頁數(shù):3 Pages

          MACOM

          MA4E2501L-1290T

          SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

          Description The MA4E2501L-1290 SurMount? Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts

          文件:60.64 Kbytes 頁數(shù):3 Pages

          MA-COM

          MA4E2501L-1290W

          SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

          Description and Applications The MA4E2501L-1290 SurMount? Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele

          文件:106.71 Kbytes 頁數(shù):3 Pages

          MACOM

          技術(shù)參數(shù)

          • Vf(V):

            0.3300

          • Vb:

            5.00

          • Total Capacitance(pF):

            0.120

          • Dynamic Resistance(ohms):

            10.0

          • Junction Capacitance(pF):

            0.120

          • Package Category:

            Surface Mount Die

          • Package:

            ODS-1290

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          M/A-COM
          24+
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          M/A-COM專營(yíng)品牌絕對(duì)進(jìn)口原裝假一賠十
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          優(yōu)勢(shì)庫存,全新原裝
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          MACOM Technology Solutions
          /ROHS.original
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          10501
          射頻元件二極管-正納電子/ 原材料及元器件
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          M/A-COM
          22+
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          1000
          只做原裝,價(jià)格優(yōu)惠,長(zhǎng)期供貨。
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          MACOM
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          一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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          M/A-COM
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          24+
          N/A
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          一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
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          4723
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          MACOM
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          詢價(jià)
          更多MA4E2501供應(yīng)商 更新時(shí)間2026-1-20 16:54:00
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