32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION The M59DR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.

文件：270.71 Kbytes 頁數(shù)：38 Pages

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32 Mbit (2Mb x 16, Dual Bank, Page ) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M59DR032E is a 32 Mbit (2Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 2.2V VDDQ supply for the Input/Output pins. An opt

文件：386.58 Kbytes 頁數(shù)：43 Pages

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32 Mbit (2Mb x 16, Dual Bank, Page ) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M59DR032E is a 32 Mbit (2Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 2.2V VDDQ supply for the Input/Output pins. An opt

文件：386.58 Kbytes 頁數(shù)：43 Pages

STMICROELECTRONICS

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32 Mbit (2Mb x 16, Dual Bank, Page ) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M59DR032E is a 32 Mbit (2Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 2.2V VDDQ supply for the Input/Output pins. An opt

文件：386.58 Kbytes 頁數(shù)：43 Pages

STMICROELECTRONICS

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