32 Mbit (2Mb x 16, Dual Bank, Page ) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M59DR032E is a 32 Mbit (2Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 2.2V VDDQ supply for the Input/Output pins. An opt

文件：386.58 Kbytes 頁數(shù)：43 Pages

STMICROELECTRONICS

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32 Mbit (2Mb x 16, Dual Bank, Page ) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M59DR032E is a 32 Mbit (2Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 2.2V VDDQ supply for the Input/Output pins. An opt

文件：386.58 Kbytes 頁數(shù)：43 Pages

STMICROELECTRONICS

意法半導(dǎo)體

32 Mbit (2Mb x 16, Dual Bank, Page ) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M59DR032E is a 32 Mbit (2Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 2.2V VDDQ supply for the Input/Output pins. An opt

文件：386.58 Kbytes 頁數(shù)：43 Pages

STMICROELECTRONICS

意法半導(dǎo)體

32 Mbit (2Mb x 16, Dual Bank, Page ) 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M59DR032E is a 32 Mbit (2Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 2.2V VDDQ supply for the Input/Output pins. An opt

文件：386.58 Kbytes 頁數(shù)：43 Pages

STMICROELECTRONICS

意法半導(dǎo)體