首頁 >M58BW016DB>規(guī)格書列表
| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp 文件：627.94 Kbytes 頁數(shù)：69 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp 文件：627.94 Kbytes 頁數(shù)：69 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp 文件：1.35281 Mbytes 頁數(shù)：70 Pages | NUMONYX | NUMONYX | ||
16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp 文件：1.35281 Mbytes 頁數(shù)：70 Pages | NUMONYX | NUMONYX | ||
16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp 文件：1.35281 Mbytes 頁數(shù)：70 Pages | NUMONYX | NUMONYX | ||
16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp 文件：1.35281 Mbytes 頁數(shù)：70 Pages | NUMONYX | NUMONYX | ||
16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp 文件：627.94 Kbytes 頁數(shù)：69 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp 文件：627.94 Kbytes 頁數(shù)：69 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally 文件：895.86 Kbytes 頁數(shù)：63 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories SUMMARY DESCRIPTION The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally 文件：895.86 Kbytes 頁數(shù)：63 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
詳細參數(shù)
- 型號：
M58BW016DB
- 制造商：
STMICROELECTRONICS
- 制造商全稱：
STMicroelectronics
- 功能描述：
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
BGA |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
ST |
2447 |
BGA |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
BOSCH |
24+ |
QFP-80 |
618 |
詢價 | |||
ST |
16+ |
QFP |
2500 |
進口原裝現(xiàn)貨/價格優(yōu)勢! |
詢價 | ||
ST |
06+ |
?QFP-80 |
1000 |
全新原裝 絕對有貨 |
詢價 | ||
ST |
25+ |
QFP |
206 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
ST |
2016+ |
QFP |
6000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
ST |
24+ |
QFP |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
ST |
2006+ |
QFP-80 |
60 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價 | ||
ST |
25+ |
QFP-80 |
2987 |
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電! |
詢價 |
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