<thead id="6dxzi"><s id="6dxzi"></s></thead>

    <strike id="6dxzi"><object id="6dxzi"><label id="6dxzi"></label></object></strike>
    

      <track id="6dxzi"><b id="6dxzi"></b></track>
    <th id="6dxzi"><input id="6dxzi"></input></th>
    

    <i id="6dxzi"><nobr id="6dxzi"></nobr></i>
    

    
  
    
  
    
    
  
    
  
    
    
    
    
    
    
  
    

    

    
    
    
    
            
    
                
    首頁
                >M58BW016FB>規(guī)格書列表
                
    
            
    
                
    
                    
    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    M58BW016FB
    16 Mbit (512 Kbit x 32, boot block, burst)
    
Description
The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp
    文件：1.28397 Mbytes 頁數(shù)：70 Pages
    MICRON
    美光
    

    M58BW016FB
    16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories
    
Description
The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp
    文件：1.35281 Mbytes 頁數(shù)：70 Pages
    NUMONYX
    

    M58BW016FB
    16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories
    
Description
The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp
    文件：627.94 Kbytes 頁數(shù)：69 Pages
    STMICROELECTRONICS
    意法半導(dǎo)體
    

    M58BW016FB70T3FF
    16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories
    
Description
The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp
    文件：627.94 Kbytes 頁數(shù)：69 Pages
    STMICROELECTRONICS
    意法半導(dǎo)體
    

    M58BW016FB70T3FT
    16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories
    
Description
The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp
    文件：627.94 Kbytes 頁數(shù)：69 Pages
    STMICROELECTRONICS
    意法半導(dǎo)體
    

    M58BW016FB70ZA3FF
    16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories
    
Description
The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp
    文件：627.94 Kbytes 頁數(shù)：69 Pages
    STMICROELECTRONICS
    意法半導(dǎo)體
    

    M58BW016FB70ZA3FT
    16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories
    
Description
The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp
    文件：627.94 Kbytes 頁數(shù)：69 Pages
    STMICROELECTRONICS
    意法半導(dǎo)體
    

    M58BW016FB7T3FF
    16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories
    
Description
The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp
    文件：1.35281 Mbytes 頁數(shù)：70 Pages
    NUMONYX
    

    M58BW016FB7T3FT
    16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories
    
Description
The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp
    文件：1.35281 Mbytes 頁數(shù)：70 Pages
    NUMONYX
    

    M58BW016FB7T3T
    16 Mbit (512 Kbit x 32, boot block, burst)
    
Description
The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp
    文件：1.28397 Mbytes 頁數(shù)：70 Pages
    MICRON
    美光
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • Speed：
      56MHz
    • MT/s：
      56MTPS
    • I/O Voltage：
      3.0 VOLTS
    • Operating Temp：
      -40C to +125C
    • Bus Width：
      x32
    • Part Status Code：
      Obsolete
    • Component Config：
      512K x32
    • Package Dimension (W x L x H) mm：
      14.00 x 20.00 x 3.10
    • Tape & Reel Qty：
      500
    • Number of Components：
      1
    • Part Type：
      COMPONENT
    • PLP：
      YES
    • Package：
      PQFP
    • Family：
      NOR FLASH
    • Technology：
      PARALLEL
    
            
    
        
    
            
    供應(yīng)商型號品牌批號封裝庫存備注價格
    
                
    



    ST
    		

    16+
    		

    QFP
    		

    2500
    		

    進(jìn)口原裝現(xiàn)貨/價格優(yōu)勢!
    		
詢價
    

    



    ST
    		

    25+23+
    		

    QFP-80
    		

    29500
    		

    絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
    		
詢價
    

    



    MIC
    		

    2018+
    		

    		

    26976
    		

    代理原裝現(xiàn)貨/特價熱賣!
    		
詢價
    

    



    MICRON/美光
    		

    24+
    		

    NA
    		

    20000
    		

    美光專營原裝正品
    		
詢價
    

    



    Micron Technology Inc.
    		

    24+
    		

    80-PQFP(19.9x13.9)
    		

    56200
    		

    一級代理/放心采購
    		
詢價
    

    



    ST
    		

    2447
    		

    QFP80
    		

    100500
    		

    一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
    		
詢價
    

    



    ST/意法
    		

    21+
    		

    QFP80
    		

    2000
    		

    百域芯優(yōu)勢 實(shí)單必成 可開13點(diǎn)增值稅發(fā)票
    		
詢價
    

    



    MICRON
    		

    25+
    		

    IC
    		

    1001
    		

    就找我吧!--邀您體驗(yàn)愉快問購元件!
    		
詢價
    

    



    micron(鎂光)
    		

    23+
    		

    NA
    		

    20094
    		

    正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
    		
詢價
    

    



    ST/意法
    		

    23+
    		

    QFP-80
    		

    50000
    		

    全新原裝正品現(xiàn)貨,支持訂貨
    		
詢價
    

            
    
        
    
        
    更多M58BW016FB供應(yīng)商
            更新時間2026-1-23 10:32:00
        
    
        
    
          
    
            
    相關(guān)規(guī)格書
    
            更多
          
    
          
        
    

        
    
          
    
            
    相關(guān)庫存
    
	        更多
          
    
          
        
    
    
    

    




    <thead id="6dxzi"><s id="6dxzi"></s></thead>
      <strike id="6dxzi"><object id="6dxzi"><label id="6dxzi"></label></object></strike>
      

        <track id="6dxzi"><b id="6dxzi"></b></track>
      <th id="6dxzi"><input id="6dxzi"></input></th>
      

      <i id="6dxzi"><nobr id="6dxzi"></nobr></i>
      

国产在线黄色电影
|
亚洲淫乱网
|
操逼一级视频
|
精品中文字幕视频
|
99综合在线
|
操屄操屄操屄操屄
|
九九九国产
|
97在线图片视频小说
|
天天干,夜夜操
|
国产一级片免费播放
|