256MB DDR SDRAM MODULE

GENERAL DESCRIPTION The Samsung M470L3223DT0 is 32M bit x 64 Double Data Rate SDRAM high density memory modules based on third gen of 256Mb DDR SDRAM respectively. The Samsung M470L3223DT0 consists of eight CMOS 32M x 8 bit with 4banks Double Data Rate SDRAMs in 66pin TSOP-II(400mil) packages mo

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256MB DDR SDRAM MODULE

GENERAL DESCRIPTION The Samsung M470L3223DT0 is 32M bit x 64 Double Data Rate SDRAM high density memory modules based on third gen of 256Mb DDR SDRAM respectively. The Samsung M470L3223DT0 consists of eight CMOS 32M x 8 bit with 4banks Double Data Rate SDRAMs in 66pin TSOP-II(400mil) packages mo

文件：171.59 Kbytes 頁數(shù)：16 Pages

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256MB DDR SDRAM MODULE

GENERAL DESCRIPTION The Samsung M470L3223DT0 is 32M bit x 64 Double Data Rate SDRAM high density memory modules based on third gen of 256Mb DDR SDRAM respectively. The Samsung M470L3223DT0 consists of eight CMOS 32M x 8 bit with 4banks Double Data Rate SDRAMs in 66pin TSOP-II(400mil) packages mo

文件：171.59 Kbytes 頁數(shù)：16 Pages

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256MB DDR SDRAM MODULE

GENERAL DESCRIPTION The Samsung M470L3224BT0 is 32M bit x 64 Double Data Rate SDRAM high density memory modules based on first gen of 256Mb DDR SDRAM respectively. The Samsung M470L3224BT0 consists of eight CMOS 16M x 16 bit with 4banks Double Data Rate SDRAMs in 66pin TSOP-II(400mil) packages m

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256MB DDR SDRAM MODULE

GENERAL DESCRIPTION The Samsung M470L3224BT0 is 32M bit x 64 Double Data Rate SDRAM high density memory modules based on first gen of 256Mb DDR SDRAM respectively. The Samsung M470L3224BT0 consists of eight CMOS 16M x 16 bit with 4banks Double Data Rate SDRAMs in 66pin TSOP-II(400mil) packages m

文件：131.95 Kbytes 頁數(shù)：14 Pages

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DDR SDRAM SODIMM

200Pin Non ECC / ECC SODIMM based on 256Mb F-die(x16) Feature ? Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V ? Double-data-rate architecture; two data transfers per clock cycle ? Bidirectional data strobe(DQS) ? Differential clock inputs(CK and CK) ? DLL aligns DQ and DQS transition wi

文件：264.05 Kbytes 頁數(shù)：20 Pages

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DDR SDRAM SODIMM

200Pin Non ECC / ECC SODIMM based on 256Mb F-die(x16) Feature ? Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V ? Double-data-rate architecture; two data transfers per clock cycle ? Bidirectional data strobe(DQS) ? Differential clock inputs(CK and CK) ? DLL aligns DQ and DQS transition wi

文件：264.05 Kbytes 頁數(shù)：20 Pages

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DDR SDRAM SODIMM

200Pin Non ECC / ECC SODIMM based on 256Mb F-die(x16) Feature ? Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V ? Double-data-rate architecture; two data transfers per clock cycle ? Bidirectional data strobe(DQS) ? Differential clock inputs(CK and CK) ? DLL aligns DQ and DQS transition wi

文件：264.05 Kbytes 頁數(shù)：20 Pages

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DDR SDRAM SODIMM

200Pin Non ECC / ECC SODIMM based on 256Mb F-die(x16) Feature ? Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V ? Double-data-rate architecture; two data transfers per clock cycle ? Bidirectional data strobe(DQS) ? Differential clock inputs(CK and CK) ? DLL aligns DQ and DQS transition wi

文件：264.05 Kbytes 頁數(shù)：20 Pages

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DDR SDRAM SODIMM

Feature ? Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V ? Double-data-rate architecture; two data transfers per clock cycle ? Bidirectional data strobe(DQS) ? Differential clock inputs(CK and CK) ? DLL aligns DQ and DQS transition with CK transition ? Programmable Read latency 2, 2.5 (c

文件：264.46 Kbytes 頁數(shù)：20 Pages

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