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    首頁 >M28F201>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    M28F201-150XK3R

    2 Mb 256K x 8, Chip Erase FLASH MEMORY

    DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in

    文件:179.07 Kbytes 頁數(shù):21 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    M28F201-150XK3TR

    2 Mb 256K x 8, Chip Erase FLASH MEMORY

    DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in

    文件:179.07 Kbytes 頁數(shù):21 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    M28F201-150XK6R

    2 Mb 256K x 8, Chip Erase FLASH MEMORY

    DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in

    文件:179.07 Kbytes 頁數(shù):21 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    M28F201-150XK6TR

    2 Mb 256K x 8, Chip Erase FLASH MEMORY

    DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in

    文件:179.07 Kbytes 頁數(shù):21 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    M28F201-150XN1R

    2 Mb 256K x 8, Chip Erase FLASH MEMORY

    DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in

    文件:179.07 Kbytes 頁數(shù):21 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    M28F201-150XN1TR

    2 Mb 256K x 8, Chip Erase FLASH MEMORY

    DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in

    文件:179.07 Kbytes 頁數(shù):21 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    M28F201-150XN3R

    2 Mb 256K x 8, Chip Erase FLASH MEMORY

    DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in

    文件:179.07 Kbytes 頁數(shù):21 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    M28F201-150XN3TR

    2 Mb 256K x 8, Chip Erase FLASH MEMORY

    DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in

    文件:179.07 Kbytes 頁數(shù):21 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    M28F201-150XN6R

    2 Mb 256K x 8, Chip Erase FLASH MEMORY

    DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in

    文件:179.07 Kbytes 頁數(shù):21 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    M28F201-150XN6TR

    2 Mb 256K x 8, Chip Erase FLASH MEMORY

    DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in

    文件:179.07 Kbytes 頁數(shù):21 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    詳細參數(shù)

    • 型號:

      M28F201

    • 制造商:

      STMICROELECTRONICS

    • 制造商全稱:

      STMicroelectronics

    • 功能描述:

      2 Mb 256K x 8, Chip Erase FLASH MEMORY

    供應(yīng)商型號品牌批號封裝庫存備注價格
    25+
    150
    公司現(xiàn)貨庫存
    詢價
    ST
    25+
    PLCC
    4500
    百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
    詢價
    ST
    23+
    PLCC32
    16900
    正規(guī)渠道,只有原裝!
    詢價
    ST
    25+
    PLCC32
    16900
    原裝,請咨詢
    詢價
    ST
    26+
    PLCC32
    60000
    只有原裝 可配單
    詢價
    ST
    23+
    PLCC/32
    7000
    絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
    詢價
    ST
    17+
    PLCC-28
    6200
    100%原裝正品現(xiàn)貨
    詢價
    ST
    24+/25+
    60
    原裝正品現(xiàn)貨庫存價優(yōu)
    詢價
    ST
    24+
    PLCC32
    3000
    公司存貨
    詢價
    ST
    05+
    原廠原裝
    4311
    只做全新原裝真實現(xiàn)貨供應(yīng)
    詢價
    更多M28F201供應(yīng)商 更新時間2026-1-22 16:43:00

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