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首頁 >M28F201>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
M28F201-120N3R	文件：179.07 Kbytes Page：21 Pages	2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in 文件：179.07 Kbytes 頁數(shù)：21 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M28F201-120N3TR	文件：179.07 Kbytes Page：21 Pages	2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in 文件：179.07 Kbytes 頁數(shù)：21 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M28F201-120N6R	文件：179.07 Kbytes Page：21 Pages	2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in 文件：179.07 Kbytes 頁數(shù)：21 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M28F201-120N6TR	文件：179.07 Kbytes Page：21 Pages	2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in 文件：179.07 Kbytes 頁數(shù)：21 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M28F201-120XK1R	文件：179.07 Kbytes Page：21 Pages	2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in 文件：179.07 Kbytes 頁數(shù)：21 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M28F201-120XK1TR	文件：179.07 Kbytes Page：21 Pages	2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in 文件：179.07 Kbytes 頁數(shù)：21 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M28F201-120XK3R	文件：179.07 Kbytes Page：21 Pages	2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in 文件：179.07 Kbytes 頁數(shù)：21 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M28F201-120XK3TR	文件：179.07 Kbytes Page：21 Pages	2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in 文件：179.07 Kbytes 頁數(shù)：21 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M28F201-120XK6R	文件：179.07 Kbytes Page：21 Pages	2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in 文件：179.07 Kbytes 頁數(shù)：21 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M28F201-120XK6TR	文件：179.07 Kbytes Page：21 Pages	2 Mb 256K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in 文件：179.07 Kbytes 頁數(shù)：21 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS

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詳細(xì)參數(shù)

型號(hào)：
M28F201
制造商：
STMICROELECTRONICS
制造商全稱：
STMicroelectronics
功能描述：
2 Mb 256K x 8, Chip Erase FLASH MEMORY

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市鴻昌盛電子科技有限公司	M28F201		25+		150	公司現(xiàn)貨庫存	詢價(jià)
深圳市卓越微芯電子有限公司	M28F201	ST	25+	PLCC	4500	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價(jià)
深圳市賽特興科技有限公司	M28F201	ST	23+	PLCC32	16900	正規(guī)渠道,只有原裝!	詢價(jià)
深圳市騰億芯科技有限公司	M28F201	ST	25+	PLCC32	16900	原裝，請(qǐng)咨詢	詢價(jià)
深圳市中飛凌科技有限公司	M28F201	ST	26+	PLCC32	60000	只有原裝可配單	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	M28F201-120K1	ST	23+	PLCC/32	7000	絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購!	詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	M28F201-90K1TR	ST	17+	PLCC-28	6200	100%原裝正品現(xiàn)貨	詢價(jià)
深圳市聯(lián)世界科技有限公司	M28F201-70KIES	ST	24+/25+		60	原裝正品現(xiàn)貨庫存價(jià)優(yōu)	詢價(jià)
深圳市一線半導(dǎo)體有限公司	M28F201-70K1	ST	24+	PLCC32	3000	公司存貨	詢價(jià)
芯有半導(dǎo)體（深圳）有限公司	M28F201-70K1	ST	05+	原廠原裝	4311	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)

更多M28F201供應(yīng)商更新時(shí)間2026-1-22 16:43:00

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