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首頁 >M28F101>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
M28F101-200N3	文件：197.89 Kbytes Page：23 Pages	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess 文件：197.89 Kbytes 頁數(shù)：23 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M28F101-200N6	文件：197.89 Kbytes Page：23 Pages	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess 文件：197.89 Kbytes 頁數(shù)：23 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M28F101-200P1	文件：197.89 Kbytes Page：23 Pages	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess 文件：197.89 Kbytes 頁數(shù)：23 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M28F101-200P3	文件：197.89 Kbytes Page：23 Pages	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess 文件：197.89 Kbytes 頁數(shù)：23 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M28F101-200P6	文件：197.89 Kbytes Page：23 Pages	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess 文件：197.89 Kbytes 頁數(shù)：23 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M28F101-200XK1	文件：197.89 Kbytes Page：23 Pages	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess 文件：197.89 Kbytes 頁數(shù)：23 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M28F101-200XK3	文件：197.89 Kbytes Page：23 Pages	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess 文件：197.89 Kbytes 頁數(shù)：23 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M28F101-200XK6	文件：197.89 Kbytes Page：23 Pages	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess 文件：197.89 Kbytes 頁數(shù)：23 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M28F101-200XN1	文件：197.89 Kbytes Page：23 Pages	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess 文件：197.89 Kbytes 頁數(shù)：23 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
M28F101-200XN3	文件：197.89 Kbytes Page：23 Pages	1 Mb 128K x 8, Chip Erase FLASH MEMORY DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess 文件：197.89 Kbytes 頁數(shù)：23 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS

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詳細(xì)參數(shù)

型號(hào)：
M28F101
制造商：
STMICROELECTRONICS
制造商全稱：
STMicroelectronics
功能描述：
1 Mb 128K x 8, Chip Erase FLASH MEMORY

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市佳鑫美電子科技有限公司	M28F101	ST	25+	DIP32	3629	原裝優(yōu)勢(shì)!房間現(xiàn)貨!歡迎來電!	詢價(jià)
深圳市賽特興科技有限公司	M28F101	ST	23+	PLCC32	16900	正規(guī)渠道,只有原裝!	詢價(jià)
深圳市騰億芯科技有限公司	M28F101	ST	25+	PLCC32	16900	原裝，請(qǐng)咨詢	詢價(jià)
深圳市中飛凌科技有限公司	M28F101	ST	26+	PLCC32	60000	只有原裝可配單	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	M28F101-100K1	ST	23+	PLCC-32	7000	絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購!	詢價(jià)
深圳市凌旭科技有限公司	M28F101-150N1	STM	2016+	TSOP	9000	只做原裝,假一罰十,公司可開17%增值稅發(fā)票!	詢價(jià)
諦輝(北京/上海/青島 )電子科技有限公司	M28F101-120KL	ST	25+	標(biāo)準(zhǔn)封裝	18000	原廠直接發(fā)貨進(jìn)口原裝	詢價(jià)
深圳市歐立現(xiàn)代科技有限公司	M28F101-120N6	ST	24+	TSSOP	6980	原裝現(xiàn)貨,可開13%稅票	詢價(jià)
深圳市弘為電子有限公司	M28F101-200K6	ST	24+	PLCC	15	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市一線半導(dǎo)體有限公司	M28F101-150K3	ST	24+	PLCC32	10000	自己現(xiàn)貨	詢價(jià)

更多M28F101供應(yīng)商更新時(shí)間2026-1-22 18:16:00

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